A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin film systems by Auger electron spectroscopical sputter depth profiling

2004 ◽  
Vol 19 (11) ◽  
pp. 3389-3397 ◽  
Author(s):  
J.Y. Wang ◽  
E.J. Mittemeijer
Keyword(s):  
Concentration Profile ◽  
Interdiffusion Coefficient ◽  
Auger Electron ◽  
Depth Profiling ◽  
Interface Roughness ◽  
Diffusion Annealing ◽  
Multilayered Structures ◽  
Preferential Sputtering ◽  
Atomic Mixing ◽  
Fitting In

A new Auger electron spectroscopical sputter depth profiling method was developed to determine the interdiffusion coefficient for the initial stage of diffusion annealing of thin films. The method is based on (i) adoption of an interdiffusion model appropriate for the specimen investigated and (ii) convolution of an accordingly calculated diffusion-induced concentration profile with the smearing effects due to atomic mixing, surface/interface roughness, escape depth of the Auger electrons, and preferential sputtering. The diffusion-induced concentration profile and the interdiffusion coefficient are determined by fitting in an iterative least-squares procedure of the calculated Auger electron spectroscopical depth profile to the measured one. The method was applied to bilayered and multilayered structures, exhibiting dominant grain-boundary diffusion and dominant volume diffusion, respectively. A very small extent of interdiffusion, characterized by diffusion distances as small as 1 nm, could be quantified.

scholarly journals Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

2016 ◽  
Vol 7 ◽  
pp. 1749-1760 ◽  
Author(s):  
Patrick Philipp ◽  
Lukasz Rzeznik ◽  
Tom Wirtz
Keyword(s):  
3D Imaging ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Lateral Resolution ◽  
Cluster Ions ◽  
Depth Information ◽  
Preferential Sputtering ◽  
Atomic Mixing ◽  
Primary Ions ◽  
Ion Species

The analysis of polymers by secondary ion mass spectrometry (SIMS) has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM), which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution. Irradiation induced damage and depth profiling capabilities obtained with these light rare gas species have been far less investigated than ion species used classically in SIMS. In this paper we simulated the sputtering of multi-layered polymer samples using the BCA (binary collision approximation) code SD_TRIM_SP to study preferential sputtering and atomic mixing in such samples up to a fluence of 1018 ions/cm2. Results show that helium primary ions are completely inappropriate for depth profiling applications with this kind of sample materials while results for neon are similar to argon. The latter is commonly used as primary ion species in SIMS. For the two heavier species, layers separated by 10 nm can be distinguished for impact energies of a few keV. These results are encouraging for 3D imaging applications where lateral and depth information are of importance.

Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical Sputter Depth Profiling

2011 ◽  
Vol 306-307 ◽  
pp. 1354-1359
Author(s):  
Jiang Yong Wang
Keyword(s):  
Depth Profile ◽  
Interdiffusion Coefficient ◽  
Auger Electron ◽  
Depth Profiling ◽  
Annealed Sample ◽  
Exponential Factor ◽  
Concentration Depth Profile ◽  
Information Depth ◽  
General Method

A general method was developed for determination of interdiffusion coefficient in nanolayered structures by Auger electron spectroscopical (AES) sputter depth profiling. The procedures of this method are as follows: (1) the concentration depth profile of annealed sample is calculated from its as-grown layered structure by adopting a suitable diffusion model; (2) this diffusion concentration depth profile is convoluted with a resolution function provided by the mixing-roughness-information depth (MRI)-model and as a result a calculated AES depth profile is obtained; (3) the interdiffusion coefficient is determined by fitting the calculated AES depth profile to the measured one. As an example, the interdiffusion coefficient parameters, the pre-exponential factor and the activation energy, were determined as 4.7×10-18 m2/s and 0.76 eV, respectively, for a GexSi1-x/Si multilayered nanostructure with Ge-Si alloyed layers of 2.2, 4.3 and 2.2 nm thickness in Si matrix.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

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