Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

2016 ◽  
Vol 31 (7) ◽  
pp. 917-922 ◽  
Author(s):  
Rudresh Ghosh ◽  
Joon-Seok Kim ◽  
Anupam Roy ◽  
Harry Chou ◽  
Mary Vu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Image Position

Abstract

Synchronous chemical vapor deposition of large-area hybrid graphene–carbon nanotube architectures

2013 ◽  
Vol 28 (7) ◽  
pp. 958-968 ◽  
Author(s):  
Maziar Ghazinejad ◽  
Shirui Guo ◽  
Wei Wang ◽  
Mihrimah Ozkan ◽  
Cengiz S. Ozkan
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Image Position

Abstract

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

Catalytic Transparency of Hexagonal Boron Nitride on Copper for Chemical Vapor Deposition Growth of Large-Area and High-Quality Graphene

ACS Nano ◽  
2014 ◽  
Vol 8 (6) ◽  
pp. 5478-5483 ◽  
Author(s):  
Min Wang ◽  
Minwoo Kim ◽  
Dorj Odkhuu ◽  
Noejung Park ◽  
Joohyun Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth

scholarly journals High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene

ACS Nano ◽  
2012 ◽  
Vol 6 (9) ◽  
pp. 8241-8249 ◽  
Author(s):  
Lixin Liu ◽  
Hailong Zhou ◽  
Rui Cheng ◽  
Woo Jong Yu ◽  
Yuan Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
High Yield ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth

scholarly journals A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS2 and WS2

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2423
Author(s):  
Jeonghwan Bae ◽  
Youngdong Yoo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Powder ◽  
Carbon Cloth ◽  
Monolayer Mos2 ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Cvd Method

Monolayer MoS2 can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS2 is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO3 and S powder has shown limitations in synthesizing high-quality monolayer MoS2 over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS2. While the conventional CVD method produces thick MoS2 films in the center of the substrate and forms MoS2 monolayers at the edge of the thick MoS2 films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS2 in the center of the substrate. The as-synthesized monolayer MoS2 was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS2 initiated from MoS2 seeds by synthesizing monolayer MoS2 with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS2 without forming thick MoS2 films in the center of the substrate. This confirms that the large-area growth of monolayer MoS2 using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS2.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth
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