Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

Rapid large-scale Characterization of CVD Graphene Layers on Glass using Fluorescence Quenching Microscopy

2011 ◽  
Vol 1344 ◽  
Author(s):  
Jennifer Reiber Kyle ◽  
Ali Guvenc ◽  
Wei Wang ◽  
Jian Lin ◽  
Maziar Ghazinejad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Fluorescence Quenching ◽  
High Throughput ◽  
Vapor Deposition ◽  
Glass Substrate ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

ABSTRACTThe exceptional electrical, optical, and mechanical properties of graphene make it a promising material for many industrial applications such as solar cells, semiconductor devices, and thermal heat sinks. However, the greatest obstacle in the use of graphene in industry is high-throughput scaling of its production and characterization. Chemical-vapor deposition growth of graphene has allowed for industrial-scale graphene production. In this work we introduce complimentary high-throughput metrology technique for characterization of chemical-vapor deposition-grown graphene. This metrology technique provides quick identification of thickness and uniformity of entire large-area chemical-vapor deposition-grown graphene sheets on a glass substrate and allows for easy identification of folds and cracks in the graphene samples. This metrology technique utilizes fluorescence quenching microscopy, which is based on resonant energy transfer between a dye molecule and graphene, to increase allow graphene visualization on the glass substrate and increase the contrast between graphene layers.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals Low-Temperature Chemical Vapor Deposition Growth of MoS2 Nanodots and Their Raman and Photoluminescence Profiles

2021 ◽  
Vol 3 ◽  
Author(s):  
Larionette P. L. Mawlong ◽  
Ravi K. Biroju ◽  
P. K. Giri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Chemical Vapor Deposition Growth ◽  
Raman Modes

We report on the growth of an ordered array of MoS2 nanodots (lateral sizes in the range of ∼100–250 nm) by a thermal chemical vapor deposition (CVD) method directly onto SiO2 substrates at a relatively low substrate temperature (510–560°C). The temperature-dependent growth and evolution of MoS2 nanodots and the local environment of sulfur-induced structural defects and impurities were systematically investigated by field emission scanning electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) techniques. At the substrate temperature of 560°C, we observed mostly few-layer MoS2, and at 510°C, multilayer MoS2 growth, as confirmed from the Raman line shape analysis. With reduced substrate temperature, the density of MoS2 nanodots decreases, and layer thickness increases. Raman studies show characteristic Raman modes of the crystalline MoS2 layer, along with two new Raman modes centered at ∼346 and ∼361 cm−1, which are associated with MoO2 and MoO3 phases, respectively. Room temperature photoluminescence (PL) studies revealed strong visible PL from MoS2 layers, which is strongly blue-shifted from the bulk MoS2 flakes. The strong visible emission centered at ∼ 658 nm signifies a free excitonic transition in the direct gap of single-layer MoS2. Position-dependent PL profiles show excellent uniformity of the MoS2 layers for samples grown at 540 and 560°C. These results are significant for the low-temperature CVD growth of a few-layer MoS2 dots with direct bandgap photoluminescence on a flexible substrate.

Synthesis of Graphene-ZnO Heterogeneous Nanostructures by Chemical Vapor Deposition

2011 ◽  
Vol 1348 ◽  
Author(s):  
Jian Lin ◽  
Miroslav Penchev ◽  
Guoping Wang ◽  
Rajat K Paul ◽  
Jiebin Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Zno Nanostructures ◽  
Large Area ◽  
Graphene Layers

ABSTRACTIn this work, we report the synthesis and characterization of three dimensional heterostructures graphene nanostructures (HGN) comprising continuous large area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition. Characterization of large area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy indicates that the CVD grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO based HGN provides unique characteristics for opportunities in future optoelectronic devices.

Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: wrinkle formation

2009 ◽  
Author(s):  
Seung Jin Chae ◽  
Fethullah Günes ◽  
Ki Kang Kim ◽  
Eun Sung Kim ◽  
Gang Hee Han ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nickel Film ◽  
Large Area ◽  
Graphene Layers

Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene

Nano Letters ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 3702-3708 ◽  
Author(s):  
Nan Liu ◽  
He Tian ◽  
Gregor Schwartz ◽  
Jeffrey B.-H. Tok ◽  
Tian-Ling Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Photodetector ◽  
Large Area ◽  
N Doping ◽  
Grown Graphene
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