Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

The structure and photocatalytic activity of TiO2 thin films deposited by dc magnetron sputtering

2012 ◽  
Vol 52 (6) ◽  
pp. 1131-1142 ◽  
Author(s):  
W.J. Yang ◽  
C.Y. Hsu ◽  
Y.W. Liu ◽  
R.Q. Hsu ◽  
T.W. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films

Ageing effects on electrical resistivity of Nb-doped TiO2 thin films deposited at a high rate by reactive DC magnetron sputtering

2018 ◽  
Vol 455 ◽  
pp. 267-275 ◽  
Author(s):  
Davide Casotti ◽  
Valentina Orsini ◽  
Alessandro di Bona ◽  
Sandra Gardonio ◽  
Mattia Fanetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
High Rate ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Ageing Effects

Effect of Coating Thickness (25–100 nm) on Properties of TiO2 Thin Films Prepared by DC Magnetron Sputtering with a TiO2 Target and Post-Annealing Process

2018 ◽  
Vol 24 (11) ◽  
pp. 8930-8934
Author(s):  
Noormariah Muslim ◽  
Muhammad Nur Syafi’ie Md Idris ◽  
Ying Woan Soon ◽  
Chee Ming Lim ◽  
Nyuk Yoong Voo
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coating Thickness ◽  
Annealing Process ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Post Annealing

scholarly journals Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

Materials ◽  
2014 ◽  
Vol 7 (6) ◽  
pp. 4105-4117 ◽  
Author(s):  
Francisco López-Huerta ◽  
Blanca Cervantes ◽  
Octavio González ◽  
Julián Hernández-Torres ◽  
Leandro García-González ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Properties ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films

High power impulse magnetron sputtering (HiPIMS) for the fabrication of antimicrobial and transparent TiO2 thin films

2022 ◽  
Vol 36 ◽  
pp. 100782
Author(s):  
Bih-Show Lou ◽  
Wei-Ting Chen ◽  
Wahyu Diyatmika ◽  
Jong-Hong Lu ◽  
Chen-Te Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Power ◽  
Tio2 Thin Films

Investigation of Structural and Thermoelectric Properties of Lead Telluride Thin Films Deposited by DC Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 253-256
Author(s):  
Theerawut Sumphao ◽  
Arthon Vora-Ud ◽  
Somporn Thaowankaew ◽  
Sunti Phewphong ◽  
Nuttee Khottoommee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Seebeck Coefficient ◽  
Lead Telluride ◽  
Phase Identification ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
Steady State Method

We prepare Lead Telluride (PbTe) thin film by DC magnetron sputtering method. The powder precursors of Pb and Te purity 99.99 % ratio 1:1 were mixed. PbTe Powder was pressed using as sputtering target. DC magnetron sputtering condition, the base pressure is 3.2×10−3 Torr, applied the argon gas (purity 99.99%) in vacuum chamber to obtained working pressure at 50×10−3 Torr. The sputtering power is 25 W and sputtering time is 30 minutes. Phase identification, morphology and film thickness have been investigated by X−ray diffraction and scanning electron microscope. Electrical resistivity and Seebeck coefficient of the PbTe thin films have been investigated by four probe steady state method. The results demonstrated that the crystal phase of PbTe is face center cubic (FCC) structure. The average PbTe films yielded film thickness is around 460 nm, the average electrical resistivity is 17 Ω m and seebeck coefficient is 8.0×10−5 V K─1.

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