Effect of Different High-K Dielectrics on the Pt Nanocrystal Formation Statistics (size, density and area coverage) for Flash Memory Application

2011 ◽  
Vol 1288 ◽  
Author(s):  
Abhishek Misra ◽  
Sunny Sadana ◽  
Satya Suresh ◽  
Meenakshi Bhaisare ◽  
Senthil Srinivasan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Surface Properties ◽  
Flash Memory ◽  
High Dielectric Constant ◽  
Area Coverage ◽  
High K ◽  
Nanocrystal Formation ◽  
High K Materials ◽  
High Dielectric ◽  
Intermetal Dielectric

ABSTRACTWe here present, metal nanocrystal (NC) formation statistics (size, density, occupancy or area coverage) on different high dielectric constant (high-K) materials which may be used as tunnel dielectric or intermetal dielectric in flash memory devices. Four important high-K materials viz. SiO2, Al2O3, HfO2 and Si3N4 are chosen for this purpose and the nanocrystal formation statistics has been found to be strongly dependent on dielectric. Among all the four dielectrics, smallest size nanocrystals with largest density are obtained on Al2O3 dielectric while on HfO2 bigger size nanocrystals are formed. This difference in nanocrystal size and density on different dielectrics is attributed to the different surface properties of these materials.

Fluoro-polymer functionalized graphene for flexible ferroelectric polymer-based high-k nanocomposites with suppressed dielectric loss and low percolation threshold

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14740-14753 ◽  
Author(s):  
Ke Yang ◽  
Xingyi Huang ◽  
Lijun Fang ◽  
Jinliang He ◽  
Pingkai Jiang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Percolation Threshold ◽  
High Dielectric Constant ◽  
Functionalized Graphene ◽  
Ferroelectric Polymer ◽  
Flexible Polymer ◽  
High K ◽  
High Dielectric

Fluoro-polymer functionalized graphene was synthesized for flexible polymer-based nanodielectrics. The resulting nanocomposites exhibit high dielectric constant, suppressed dielectric loss and low percolation threshold.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

AbstractThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

The Properties of Mfmos and MFOS Capacitors with High K Gate Oxides for one Transistor Memory Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Hong Ying ◽  
Bruce Ulrich
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Silicon Substrate ◽  
High Dielectric Constant ◽  
Basic Mechanism ◽  
Germanium Oxide ◽  
Gate Oxides ◽  
High K ◽  
High Dielectric ◽  
Memory Applications

AbstractMFMOS and MFOS (M: Metal, F: Ferroelectrics, O: Oxide, S: Silicon) capacitors with high k gate oxides, such as ZrO2, HfO2 thin films, have been fabricated for one transistor memory applications. Experimental results showed that ZrO2 and HfO2 have no serious reaction or diffusion into silicon substrate. Due to their high dielectric constant, the operation voltages of MFMOS capacitors are reduced. The MFMOS capacitor exhibits 2V memory window. For lead germanium oxide (PGO) on ZrO2 and PGO on HfO2 MFOS memory cells the memory windows are 1.8 V and 1.6 V, respectively, which are large enough for one-transistor memory applications. The basic mechanism for one-transistor memory applications was also discussed.

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 745 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

ABSTRACTThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

Enhanced performance of supercapacitors by constructing a “mini parallel-plate capacitor” in an electrode with high dielectric constant materials

2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Carbon Fiber ◽  
Parallel Plate ◽  
Sandwich Structure ◽  
High Dielectric Constant ◽  
Parallel Plate Capacitor ◽  
Plate Capacitor ◽  
Fiber Metal ◽  
High Dielectric ◽  
Mini Plate

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.

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