scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

scholarly journals Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials

2021 ◽  
Vol 11 (5) ◽  
pp. 3882
Author(s):  
Hakkee Jung ◽  
Byungon Kim
Keyword(s):  
Dielectric Material ◽  
Dielectric Materials ◽  
Double Gate ◽  
Short Channel ◽  
Current Ratio ◽  
Arithmetic Average ◽  
High K ◽  
Double Gate Mosfet ◽  
High K Dielectric ◽  
High Dielectric

<span>The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO<sub>2</sub>/high-k dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potential distributions are obtained from the Poission equation, and the threshold voltage is calculated from the second derivative method to obtain the on-current. As a result, this model agrees with the results from other papers. </span><span>The on-off current ratio is in proportion to the arithmetic average of the upper and lower high dielectric material thicknesses. The on-off current ratio of 10<sup>4</sup> or less is shown for SiO<sub>2</sub>, but the on-off current ratio for TiO<sub>2</sub> (<em>k</em>=80) increases to 10<sup>7</sup> or more.</span>

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

Fluoro-polymer functionalized graphene for flexible ferroelectric polymer-based high-k nanocomposites with suppressed dielectric loss and low percolation threshold

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14740-14753 ◽  
Author(s):  
Ke Yang ◽  
Xingyi Huang ◽  
Lijun Fang ◽  
Jinliang He ◽  
Pingkai Jiang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Percolation Threshold ◽  
High Dielectric Constant ◽  
Functionalized Graphene ◽  
Ferroelectric Polymer ◽  
Flexible Polymer ◽  
High K ◽  
High Dielectric

Fluoro-polymer functionalized graphene was synthesized for flexible polymer-based nanodielectrics. The resulting nanocomposites exhibit high dielectric constant, suppressed dielectric loss and low percolation threshold.

Synthesize CCTO Using Different Mixing Media

2016 ◽  
Vol 840 ◽  
pp. 87-90 ◽  
Author(s):  
Rosyaini Afindi Zaman ◽  
Mohamad Johari Abu ◽  
Saniah Abdul Karim ◽  
Julie Juliewatty Mohamed ◽  
Mohd Fadzil Ain ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Electronic Devices ◽  
Sol Gel ◽  
Dielectric Materials ◽  
High Energy ◽  
High Energy Density ◽  
Dielectric Ceramic ◽  
Wide Range ◽  
High Dielectric

In recent years, there has been an increasing interest on high dielectric constant that have significant applications in electronic devices. Dielectric materials have many technological applications such as capacitors, resonators and filters. High dielectric ceramic capacitors based perovskite oxides are necessary for modern electronic devices and are found to be suitable for a wide range of applications. Subramanian et al. discovered the high dielectric constant of CaCu3Ti4O12 (CCTO) ~ 10,000 at room temperature. CCTO has the cubic perovskite crystal structure and high dielectric constant of ~ 104 up to 105 at radio frequency and good temperature stability over a wide temperature range [1,2]. These properties were desired for various microelectronic applications. With the high dielectric constant, the material can store more charge and the values make CCTO an attractive material for ultra-high energy density capacitors. However, this properties can be accomplished if single phase of CCTO is formed. Many research have been done recently on the synthesis of the cubic perovskite CCTO and many techniques are working such as sol-gel route [3], combustion techniques [4], molten salt process [5] and etc., but this technique is difficult and complex process during sample preparation.

scholarly journals Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

2020 ◽  
Vol 18 (2) ◽  
pp. 724
Author(s):  
Ameer F. Roslan ◽  
F. Salehuddin ◽  
A. S. M. Zain ◽  
K. E. Kaharudin ◽  
I. Ahmad
Keyword(s):  
Performance Improvement ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Metal Gate ◽  
High Permittivity ◽  
Minimum Requirement ◽  
Technology Roadmap ◽  
High K ◽  
Low Performance ◽  
High K Dielectric

<p><span>In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of the SiO2. Therefore, the 19 nm n-channel MOSFET device with different High-K dielectric materials are implemented and its performance improvement has also been analysed. Virtual fabrication is exercised through ATHENA module from Silvaco TCAD tool. Meanwhile, the device characteristic was utilized by using an ATLAS module. The aforementioned materials have also been simulated and compared with the conventional gate oxide SiO2 for the same structure. At the end, the results have proved that Titanium oxide (TiO2) device is the best dielectric material with a combination of metal gate Tungsten Silicides (WSix). The drive current (ION) of this device (WSix/TiO2) is 587.6 µA/um at 0.534 V of threshold voltage (VTH) as opposed to the targeted 0.530 V predicted, as well as a relatively low IOFF that is obtained at 1.92 pA/µm. This ION value meets the minimum requirement predicted by International Technology Roadmap for Semiconductor (ITRS) 2013 prediction for low performance <br /> (LP) technology. </span></p>

scholarly journals Polymer Composites with Improved Dielectric Properties: A Review

2021 ◽  
Vol 66 (2) ◽  
pp. 166
Author(s):  
B. Ghule ◽  
M. Laad
Keyword(s):  
Dielectric Constant ◽  
Energy Storage ◽  
Dielectric Properties ◽  
Polymer Composites ◽  
High Dielectric Constant ◽  
Dielectric Materials ◽  
Filler Material ◽  
Filler Materials ◽  
K Value ◽  
High Dielectric

Materials exhibiting high dielectric constant (k) values find applications in capacitors, gate dielectrics, dielectric elastomers, energy storage device, while materials with low dielectric constant are required in electronic packaging and other such applications. Traditionally, high k value materials are associated with high dielectric losses, frequency-dependent dielectric behavior, and high loading of a filler. Materials with low k possess a low thermal conductivity. This creates the new challenges in the development of dielectric materials in both kinds of applications. Use of high dielectric constant filler materials increases the dielectric constant. In this study,the factors affecting the dielectric constant and the dielectric strength of polymer composites are explored. The present work aims to study the effect of various parameters affecting the dielectric properties of the materials. The factors selected in this study are the type of a polymer, type of a filler material used, size, shape, loading level and surface modification of a filler material, and method of preparation of the polymer composites. The study is focused on the dielectric enhancement of polymer nanocomposites used in the field of energy storage devices. The results show that the core-shell structured approach for high dielectric constant materials incorporated in a polymer matrix improves the dielectric constant of the polymer composite.

scholarly journals Polyarylene Ether Nitrile-Based High-k Composites for Dielectric Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Yong You ◽  
Chenhao Zhan ◽  
Ling Tu ◽  
Yajie Wang ◽  
Weibin Hu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Dielectric Materials ◽  
Dielectric Ceramic ◽  
Polyarylene Ether Nitrile ◽  
Effective Strategies ◽  
Low Dielectric ◽  
Flexible Polymer ◽  
Ceramic Fillers ◽  
High Dielectric

Flexible polymer-based composites exhibiting high dielectric constant as well as low dielectric loss have been intensively investigated for their potential utilization in electronics and electricity industry and energy storage. Resulting from the polar -CN on the side chain, polyarylene ether nitrile (PEN) shows relatively high dielectric constant which has been extensively investigated as one of the hot spots as dielectric materials. However, the dielectric constant of PEN is still much lower than the ceramic dielectrics such as BaTiO3, TiO2, and Al2O3. In this review, recent and in-progress advancements in the designing and preparing strategies to obtain high-k PEN-based nanocomposites are summarized. According to the types of the added fillers, the effects of organic fillers, dielectric ceramic fillers, and conductive fillers on electric properties of PEN-based composites are investigated. In addition, other factors including the structures and sizes of the additive, the compatibility between the additive agent and the PEN, and the interface which affects the dielectric properties of the obtained composite materials are investigated. Finally, challenges facing in the design of more effective strategies for the high-k PEN-based dielectric materials are discussed.

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

2002 ◽  
Vol 747 ◽  
Author(s):  
J Robertson ◽  
P W Peacock
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Atomic Structure ◽  
High Dielectric Constant ◽  
Dangling Bond ◽  
Charge Neutrality ◽  
Band Offsets ◽  
High K ◽  
Bulk Charge ◽  
High Dielectric

AbstractThe bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO2 and SrTiO3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

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