Growth and Field Emission Properties of Boron Nitride Island Films by Low-energy Ion-assisted Deposition

2011 ◽  
Vol 1307 ◽  
Author(s):  
K. Teii ◽  
J. H. C. Yang ◽  
R. Yamao ◽  
S. Matsumoto
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Low Energy ◽  
Emission Properties ◽  
Inductively Coupled ◽  
Field Emission Properties ◽  
Island Films

ABSTRACTWe report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

The Field Emission of Globe-Like Diamond Microcrystalline Aggregate Films

2011 ◽  
Vol 279 ◽  
pp. 88-92
Author(s):  
Jin Hai Gao ◽  
Wu Qing Zhang ◽  
Zhen Li
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Current Density ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emission Properties ◽  
Turn On

The globe-like diamond microcrystalline aggregates films were fabricated by microwave plasma chemical vapor deposition method. The field emission properties and emission stability of the films were tested using a diode structure in vacuum. It was found that the globe-like diamond microcrystalline aggregates films exhibited good electron emission properties and stability. The turn-on field of 0. 55 V /μm and the current density of 11mA/cm2 at the electric fields of 2.73V/μm were obtained. At the successive operator circles, the turn-on field tends to stabilize at 1. 08V /μm and the current density of 6.6 mA/cm2 is obtained.

Investigation of the Field Emission Stability of Sphere-Like Diamond Microcrystalline-Aggregates Films

2014 ◽  
Vol 1035 ◽  
pp. 3-6
Author(s):  
Jin Hai Gao ◽  
Zhen Li ◽  
Wu Qing Zhang
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Microwave Plasma ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Diffraction Spectrum ◽  
Raman Scattering Spectroscopy ◽  
Emission Properties ◽  
Field Emission Properties

The sphere-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti metal layer was used as substrates. The fabricated diamond microcrystalline aggregates were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum (XRD), scanning electron microscopy (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the sphere-like diamond microcrystalline-aggregates films exhibited good electron emission properties. The turn-on field was only 0.55V/μm, and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. After several cycling operations, the field emission tended to stable characteristics of current versus voltage. The stability evolvement and mechanism are investigated relating to microstructure of the sphere-like diamond microcrystalline-aggregates films.

LaB6 nanowires and their field emission properties

2005 ◽  
Vol 901 ◽  
Author(s):  
Han Zhang ◽  
Jie Tang ◽  
Qi Zhang ◽  
Gongpu Zhao ◽  
Guang Yang ◽  
...  
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Rectangular Cross Section ◽  
Chemical Vapor ◽  
Emission Current Density ◽  
Chemical Vapor Deposition Method ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Microscopes ◽  
Electron Emitters

AbstractFor field-induced electron emission, the two factors that enable a high emission current density at low applied voltages are (a) low work function of the emitter and (b) sharpness of the emitter tip. We have developed and applied a chemical vapor deposition method to synthesize single-crystalline LaB6 nanowires for applications as point electron emitters. The crystallographic orientation of the grown nanowires can be controlled by the catalysts used in synthesis and their typical diameter is ranged from below 20 nm to over 100 nm. The nanowires’ tip is either hemispherical or flat top with rectangular cross-section depending on the catalyst being utilized. The field emission properties have also been measured from the single nanowire emitters and the results are discussed for applications as point electron sources used in high performance electron optical instruments such as the transmission and scanning electron microscopes.

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