Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition

2010 ◽  
Vol 97 (6) ◽  
pp. 063510 ◽  
Author(s):  
Zhong Li ◽  
Joseph Salfi ◽  
Christina De Souza ◽  
Ping Sun ◽  
Selvakumar V. Nair ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Nanowire ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

2009 ◽  
Vol 1198 ◽  
Author(s):  
Neeraj Nepal ◽  
M. Oliver Luen ◽  
Pavel Frajtag ◽  
John Zavada ◽  
Salah M. Bedair ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Multilayer Structures ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractWe report on metal organic chemical vapor deposition growth of GaMnN/p-GaN/n-GaN multilayer structures and manipulation of room temperature (RT) ferromagnetism (FM) in a GaMnN layer. The GaMnN layer was grown on top of a n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. Ms was almost doubled after annealing demonstrating that the FM observed in GaMnN film is carrier-mediated. To control the hole concentration of the p-GaN layer by depletion, GaMnN/p-GaN/n-GaN multilayer structures of different p-GaN thickness (Xp) were grown on sapphire substrates. We have demonstrated that the FM depends on the Xp and the applied bias to the GaN p-n junction. The FM of these multilayer is independent on the top GaMnN layer thickness (tGaMnN) for tGaMnN >200 nm and decreases for tGaMnN < 200 nm. Thus the room temperature FM of GaMnN i-p-n structure can also be controlled by changing Xp and tGaMnN in the GaMnN i-p-n structures.

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

Introducing Voids around the Interlayer of AlN by High Temperature Annealing

2021 ◽  
Author(s):  
Jianwei Ben ◽  
Jiangliu Luo ◽  
Zhichen Lin ◽  
Xiaojuan Sun ◽  
Xinke Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Temperature Annealing ◽  
Simple Method ◽  
Metal Organic ◽  
Interlayer Structure ◽  
Organic Chemical Vapor Deposition

Abstract To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26&#215;109 cm-2 to 5.10&#215;108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.

Effect of Co Doping on the Galvanomagnetic Properties of ZnO Thin Films

2015 ◽  
Vol 233-234 ◽  
pp. 713-716
Author(s):  
Vladiimir G. Kytin ◽  
Olga V. Reukova ◽  
Dannil D. Melnik ◽  
Lidiya I. Burova ◽  
Andrey R. Kaul ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Films ◽  
Relative Variation ◽  
Co Doping ◽  
Zinc Oxide Films ◽  
Galvanomagnetic Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped

The influence of the Co doping on the properties of zinc oxide films was investigated. The films were grown by oxygen and water assisted metal organic chemical vapor deposition (MOCVD). The large positive magnetoresistance (PMR) was observed in Co doped films at low temperatures while the negative magnetoresistance was observed in undoped ZnO films deposited under the same conditions. The relative variation of resistivity was comparable in the films grow by oxygen and water assisted MOCVD although the resistivity and its temperature dependence were significantly different. The magnitude of PMR increases with an increase of the Co content and with the decrease of temperature.

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