Effect of Co Doping on the Galvanomagnetic Properties of ZnO Thin Films

2015 ◽  
Vol 233-234 ◽  
pp. 713-716
Author(s):  
Vladiimir G. Kytin ◽  
Olga V. Reukova ◽  
Dannil D. Melnik ◽  
Lidiya I. Burova ◽  
Andrey R. Kaul ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Films ◽  
Relative Variation ◽  
Co Doping ◽  
Zinc Oxide Films ◽  
Galvanomagnetic Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped

The influence of the Co doping on the properties of zinc oxide films was investigated. The films were grown by oxygen and water assisted metal organic chemical vapor deposition (MOCVD). The large positive magnetoresistance (PMR) was observed in Co doped films at low temperatures while the negative magnetoresistance was observed in undoped ZnO films deposited under the same conditions. The relative variation of resistivity was comparable in the films grow by oxygen and water assisted MOCVD although the resistivity and its temperature dependence were significantly different. The magnitude of PMR increases with an increase of the Co content and with the decrease of temperature.

Giant moment and magnetic anisotropy in Co-doped ZnO films grown by pulse-injection metal organic chemical vapor deposition

2006 ◽  
Vol 89 (23) ◽  
pp. 232503 ◽  
Author(s):  
Anna Zukova ◽  
Arunas Teiserskis ◽  
Sebastiaan van Dijken ◽  
Y. K. Gun’ko ◽  
V. Kazlauskiene
Keyword(s):  
Chemical Vapor Deposition ◽  
Magnetic Anisotropy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Films ◽  
Metal Organic ◽  
Doped Zno ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped

Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

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