Effect of Doping on Nanowire Morphology during Plasma-assisted Chemical Vapor Deposition

ABSTRACTMorphologies of silicon nanowires grown by plasma-assisted metalorganic chemical vapor deposition were studied in the presence of various dopant precursors. The varied precursors affected the axial and radial growth rates over orders of magnitude where triethylborane showed the strongest enhancements for both axial and radial growth, and triethylarsenic and triethylantimony retarded axial growth. Native oxide thickness is also shown to depend strongly on doping condition resulting in increased oxide thicknesses for increased carrier concentration, using shifts in the measured binding energy of the silicon 2p3/2 state as a proxy for carrier concentration.