Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond
Keyword(s):
ABSTRACTA temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.
1991 ◽
Vol 62
(6)
◽
pp. 1666-1667
◽
2020 ◽
Vol 27
(5)
◽
pp. 703-712
2018 ◽
Vol 35
(7)
◽
pp. 078101
◽
2008 ◽
Vol 17
(7-10)
◽
pp. 1320-1323
◽