Low-Temperature Processed Hybrid Organic/Silicon Solar Cells with Power Conversion Efficiency up to 6.5%

2015 ◽  
Vol 1771 ◽  
pp. 201-206 ◽  
Author(s):  
M. Weingarten ◽  
T. Zweipfennig ◽  
A. Vescan ◽  
H. Kalisch
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Schottky Diode ◽  
Current Density ◽  
Short Circuit ◽  
Power Conversion ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Organic Silicon ◽  
Hybrid Devices

ABSTRACTHybrid organic/silicon heterostructures have become of great interest for photovoltaic application due to their promising features (e.g. easy fabrication in a low-temperature process) for cost-effective photovoltaics. This work is focused on solar cells with a hybrid heterojunction between the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) and n-doped monocrystalline silicon. As semi-transparent top contact, a thin (15 nm) Au layer was employed. Devices with different P3HT thicknesses were processed by spin-casting and compared with a reference Au/n-Si Schottky diode solar cell.The current density-voltage (J-V) measurements of the hybrid devices show a significant increase in open-circuit voltage (VOC) from 0.29 V up to 0.50 V for the best performing hybrid devices compared to the Schottky diode reference, while the short-circuit current density (JSC) does not change significantly. The increased VOC indicates that P3HT effectively reduces the reverse electron current into the gold contact. The wavelength-dependent JSC measurements show a decreased JSC in the wavelength range of P3HT absorption. This is related to the reduced JSC generation in silicon not being compensated by JSC generation in P3HT. It is concluded that the charge generation in P3HT is less efficient than in silicon.After a thermal annealing of the hybrid P3HT/silicon solar cells, we achieved power conversion efficiencies (PCE) (AM1.5 illumination) up to 6.5% with VOC of 0.52 V, JSC of 18.6 mA/cm² and a fill factor (FF) of 67%. This is more than twice the efficiency of the reference Schottky diode.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Effect of temperature on organic Schottky barrier cells

1981 ◽  
Vol 59 (6) ◽  
pp. 727-732 ◽  
Author(s):  
Rafik O. Loutfy ◽  
Cheng-Kuo Hsiao
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Schottky Barrier ◽  
Conversion Efficiency ◽  
Organic Solar Cells ◽  
Short Circuit ◽  
Power Conversion ◽  
Open Circuit ◽  
Effect Of Temperature ◽  
Photovoltaic Properties

The effect of temperature on the photovoltaic properties of indium/metal-free phthalocyanine Schottky barrier solar cells was investigated in the range 260–350 K. In general, the short circuit photocurrent, Jsc, and fill factor, ff, increased with increasing temperature (in contrast to inorganic photocells). The device series resistance and open circuit photovoltage, Voc, decreased (similar to inorganic photocells) as temperature was raised. An increase in the overall power conversion efficiency, η, has been observed with increase of temperature. In the case of x-H2Pc, the power conversion efficiency increased by 2.5 times due to a temperature rise of 60 °C above ambient. Thus, for operation at temperatures above ambient, organic solar cells may offer a significant advantage over inorganic cells.Analysis of the variation of the photovoltage with temperature showed that the decrease in Voc is mainly due to variation injunction impedance, which is controlled by thermionic current at high temperature and ionized impurity at low temperature.

The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells

2019 ◽  
Vol 36 (3) ◽  
pp. 90-94
Author(s):  
Barbara Swatowska ◽  
Piotr Panek ◽  
Dagmara Michoń ◽  
Aleksandra Drygała
Keyword(s):  
Solar Cells ◽  
Contact Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Multicrystalline Silicon ◽  
Silicon Solar Cells ◽  
Electrical Parameters ◽  
Content Type ◽  
Diffusion Parameters

Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced – 22 and 48 Ω/□. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (Uoc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm2 area and 240 µm thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (Rsheet) of 45-48 Ω/□. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, Uoc between 585 and 612 mV, short circuit current (Isc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 Ω/□ emitter resistance have better parameters than cells with Rsheet of 22 Ω/□. The contact resistance is the highest for mc-Si with Rsheet of 48 Ω/□ and reaches the value 3.8 Ωcm.

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

Organic Sensitizers Containing Julolidine Moiety for Dye-Sensitized Solar Cells

2008 ◽  
Vol 8 (9) ◽  
pp. 4761-4766 ◽  
Author(s):  
Dong Wook Kim ◽  
Jin Joo Choi ◽  
Man Ku Kang ◽  
Yongku Kang ◽  
Changjin Lee
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Organic Sensitizers

We prepared organic sensitizers (S1 and S2) containing julolidine moiety as a donor, phenyl or phenylene thiophene units as a conjugation bridge, and cyano acetic acid as an acceptor for dye sensitized solar cells. S1 exhibited two absorption maxima at 441 nm (ε = 26 200) and 317 nm (ε = 15 500) due to the π–π* transition of the dye molecule. S2 dyes with an additional thiophene unit showed the absorption maximum extended by 18 nm. DSSCs based on S1 dye achieved 2.66% of power conversion efficiency with 8.3 mA cm−2 of short circuit current, 576 mV of open circuit voltage, and 0.56 of fill factor. DSSCs using S2 dye with a longer conjugation attained only 1.48% of power conversion efficiency. The 0.21 V lower driving force for regeneration of the S2 dye compared to the S1 dye is one of the reasons for low conversion efficiency of the S2 dye.

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Study on the Performance of Aluminum Thick Film Contacts for Silicon Solar Cells

2013 ◽  
Vol 833 ◽  
pp. 241-246
Author(s):  
Ming Fu ◽  
Hong Yong Li ◽  
Gong Lei Jin ◽  
Lin Fan ◽  
Dong Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thick Film ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Back Surface ◽  
Gravimetric Analysis ◽  
Scanning Calorimetry ◽  
Photoelectric Properties

Aluminum rear contacts of silicon solar cells are made commonly by screen-printing aluminum paste and sintering process. Aluminum thick film contacts have a direct effect on photoelectric properties of solar cells, like open circuit voltage (Voc), short circuit current (Isc), conversion efficiency (η), etc. The principle of Al-back surface field (BSF) has been studied in this paper. With thermal gravimetric analysis and differential scanning calorimetry (TGA-DSC) method, the chemical reactions between aluminum thick film and silicon substrate during heat treatment have been investigated. The microstructure of aluminum thick film contacts were analysed by SEM. The electrical properties of Al-BSF are improved by adding a proper amount of nano silicon to the aluminum paste.

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