The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

2005 ◽  
Vol 905 ◽  
Author(s):  
Burag Yaglioglu ◽  
Hyo-Young Yeom ◽  
Roderic Beresford ◽  
David Paine
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Active Matrix ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
P Type

AbstractThin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.

Formaldehyde Detection Based on P3HT/InSnO Composite Thin Film Transistor

2014 ◽  
Vol 875-877 ◽  
pp. 82-86
Author(s):  
Xian Li ◽  
Ya Dong Jiang ◽  
Hui Ling Tai ◽  
Guang Zhong Xie ◽  
Wen Chao Dan
Keyword(s):  
Thin Film ◽  
Composite Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Composite Thin Film ◽  
Organic Thin Film ◽  
Response And Recovery

Formaldehyde, a colorless and pungent-smelling gas, had been confirmed be a huge threat to people health. The detection of formaldehyde was necessary and important at room temperature. Sprayed P3HT/InSnO composite film based on organic thin film transistors (OTFT) was fabricated to detect formaldehyde at room temperature in this paper. The results showed that P3HT/ InSnO-OTFT showed better response and recovery to HCHO compared with P3HT-OTFT at room temperature.

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

scholarly journals P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

2019 ◽  
Vol 50 (1) ◽  
pp. 1251-1254
Author(s):  
Sisi Wang ◽  
Lei Lu ◽  
Jiapeng Li ◽  
Zhihe Xia ◽  
Hoi Sing Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Fluorine Doping ◽  
P Type

Tetrahedral Amorphous Carbon Thin Film Transistors

1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Undoped Material ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Amorphous Carbon Thin Film

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

p-Type ${\hbox{Cu}}_{x}{\hbox{O}}$ Films Deposited at Room Temperature for Thin-Film Transistors

2012 ◽  
Vol 8 (1) ◽  
pp. 41-47 ◽  
Author(s):  
V. Figueiredo ◽  
E. Elangovan ◽  
R. Barros ◽  
J. V. Pinto ◽  
T. Busani ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
P Type

Combinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor

2006 ◽  
Vol 928 ◽  
Author(s):  
Tatsuya Iwasaki ◽  
Naho Itagaki ◽  
Tohru Den ◽  
Hideya Kumomi ◽  
Kenji Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Chemical Compositions ◽  
Semiconductor Films ◽  
Mixed Gas ◽  
Current Ratio ◽  
Gas Atmosphere ◽  
Wide Compositional Range ◽  
Active Channel

ABSTRACTThe device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V−1sec−1 and on-to-off current ratio of ∼108.

scholarly journals Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics

2020 ◽  
Vol 9 (5) ◽  
pp. 270-273
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Simulation Software ◽  
Active Components ◽  
Large Area ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
Active Matrix

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

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