Tetrahedral Amorphous Carbon Thin Film Transistors

1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Undoped Material ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Amorphous Carbon Thin Film

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

Influence of Film Thickness on Intrinsic Growth Stress and Raman Evaluation of Tetrahedral Amorphous Carbon Films

2005 ◽  
Vol 475-479 ◽  
pp. 3627-3630
Author(s):  
Jia Qi Zhu ◽  
Jie Cai Han ◽  
Song He Meng ◽  
Xiao Dong He ◽  
Manlin Tan ◽  
...  
Keyword(s):  
Film Thickness ◽  
Raman Spectra ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type

To investigate the effects of film thickness on Raman characterization and intrinsic stress of tetrahedral amorphous carbon and ascertain the correlations between stress and Raman spectra, the ta-C films with different film thickness were deposited on the polished P-type (100) c-silicon substrate with the same conditions by the filtered cathodic vacuum arc technology. The film thickness was measured by the surface profiler and the atomic force microscope; stress was calculated according to the curvature of the stress samples examined by the surface profiler; the microstructure of the films was characterized by the Ramanscope. It has been shown that the stress drops down continuously and the dropping rate turns mild with the increase of film thickness. When the film thickness surpasses 30 nm, the compressive stress is kept at less than 5 GPa. The intensity of the first and second order peak of the c-Si substrate in the visible Raman spectra gradually depresses with the increase of thickness. However, the FWHM is minimal and the maximal intensity is highest from 50 nm to 80 nm, accordingly the clearest Raman signals can be acquired in this scale. Additionally, the position of the asymmetric broad peak gradually shifts towards the lower wavenumber with the increase of thickness and the decease of intrinsic stress.

FCVA-Synthesized Tetrahedral Amorphous Carbon Films for Biomedical Applications

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang
Keyword(s):  
Amorphous Carbon ◽  
Biomedical Applications ◽  
Pure Titanium ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Negative Bias Voltage ◽  
Tetrahedral Amorphous Carbon ◽  
In Vitro Measurements ◽  
Filtered Cathodic Vacuum Arc

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.

A tribological study of tetrahedral amorphous carbon films prepared by filtered cathodic vacuum arc technique

Vacuum ◽  
2004 ◽  
Vol 75 (3) ◽  
pp. 231-236 ◽  
Author(s):  
Xiang Yu ◽  
Xu Zhang ◽  
Cheng-biao Wang ◽  
Meng Hua ◽  
Li-guo Wang
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
Tetrahedral Amorphous Carbon ◽  
Tribological Study ◽  
Filtered Cathodic Vacuum Arc

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique

2007 ◽  
Vol 101 (9) ◽  
pp. 094905 ◽  
Author(s):  
Clement Yuen ◽  
S. F. Yu ◽  
E. S. P. Leong ◽  
S. P. Lau ◽  
K. Pita ◽  
...  
Keyword(s):  
Room Temperature ◽  
Vacuum Arc ◽  
Polycrystalline Films ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type
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