scholarly journals P‐11: Carrier Concentration Reduction by Fluorine Doping in P‐Type SnO Thin‐Film Transistors

2019 ◽  
Vol 50 (1) ◽  
pp. 1251-1254
Author(s):  
Sisi Wang ◽  
Lei Lu ◽  
Jiapeng Li ◽  
Zhihe Xia ◽  
Hoi Sing Kwok ◽  
...  
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Fluorine Doping ◽  
P Type

The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

2005 ◽  
Vol 905 ◽  
Author(s):  
Burag Yaglioglu ◽  
Hyo-Young Yeom ◽  
Roderic Beresford ◽  
David Paine
Keyword(s):  
Thin Film ◽  
Carrier Concentration ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Active Matrix ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
P Type

AbstractThin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate

scholarly journals The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

2021 ◽  
Vol 218 (18) ◽  
pp. 2170052
Author(s):  
Sooji Nam ◽  
Su-Jae Lee ◽  
Jae-Eun Pi ◽  
Jong-Heon Yang ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
P Type

Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10309-10314 ◽  
Author(s):  
Chang-Ho Choi ◽  
Jenna Y. Gorecki ◽  
Zhen Fang ◽  
Marshall Allen ◽  
Shujie Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
First Time

Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

Gallium Doping Effects for Improving Switching Performance of p-Type Copper(I) Oxide Thin-Film Transistors

2020 ◽  
Vol 12 (34) ◽  
pp. 38350-38356
Author(s):  
Jun Hyeon Bae ◽  
Jin Hyeok Lee ◽  
Sung Pyo Park ◽  
Tae Soo Jung ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Switching Performance ◽  
Doping Effects ◽  
Gallium Doping ◽  
P Type
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