Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations

2006 ◽  
Vol 911 ◽  
Author(s):  
Serguei Soubatch ◽  
Wai Y. Lee ◽  
Martin Hetzel ◽  
Chariya Virojanadara ◽  
Camilla Coletti ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Hydrogen Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Surface Phases ◽  
Low Energy Electron

AbstractA-plane (11-20) and diagonal cut (1-102) and (-110-2) surfaces of 4H-SiC have been investigated using atomic force microscopy (AFM), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). After hydrogen etching the surfaces show large, flat terraces. On SiC(11-20) steps down to single atomic heights are observed. On the diagonal cut surfaces steps run parallel and perpendicular to the [-1101] direction, yet drastically different morphologies for the two isomorphic orientations are found. All surfaces immediately display a sharp LEED pattern. For SiC(1-102) and SiC(-110-2) the additional significant presence of oxygen in the AES spectra indicates the development of an ordered oxide. All three surfaces show an oxygen free, well ordered surface after Si deposition and annealing. A transformation between different surface phases is observed upon annealing.

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface

2006 ◽  
Vol 527-529 ◽  
pp. 673-676 ◽  
Author(s):  
W.Y. Lee ◽  
S. Soubatch ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
X Ray ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Surface Phases ◽  
Low Energy Electron

The atomic structure of the 4H-SiC(11 2 0) surface including possible phase transformations via Si deposition and annealing has been investigated using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The sample is initially prepared by hydrogen etching before loading into the ultra-high vacuum system. The sample is then out-gassed to remove oxygen from the surface. To explore the existence of ordered surface phases, Si is deposited on the sample at 850°C for 15 minutes followed by a series of sequential annealing steps. Throughout this process, the surface is monitored by LEED, AES and XPS. LEED shows that the surface continuously maintains a (1×1) periodicity. Yet, two unique and distinguishable (1×1) phases can be identified. The changes between these phases are clearly demonstrated by the LEED spot intensities. Simultaneously, the Auger and XPS data show a decrease in Si intensity.

Structure and Morphology of Tetracene Thin Films on Hydrogen-Terminated Si(001)

2006 ◽  
Vol 965 ◽  
Author(s):  
X. R. Qin ◽  
A. Tersigni ◽  
J. Shi ◽  
D. T. Jiang
Keyword(s):  
Structural Phase ◽  
Film Structure ◽  
Scanning Tunneling ◽  
Growth Morphology ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystalline Substrate ◽  
X Ray Absorption

ABSTRACTScanning tunneling microscopy (STM), atomic force microscopy (AFM) and near-edge x-ray absorption fine structure (NEXAFS) have been used to study the structure of tetracene films on hydrogen-passivated Si(001). A distinct growth morphology change that occurs around a few monolayers of film thickness was characterized. This coverage-dependent film structural phase transition leads to a molecularly ordered film structure commensurate with the crystalline substrate.

Sign in / Sign up

Export Citation Format

Share Document