The Growth of ZnO on CrN Buffer Layer Using Surface Phase Control by Plasma Assisted Molecular-beam Epitaxy

2006 ◽  
Vol 957 ◽  
Author(s):  
Jinsub Park ◽  
Tsutomu Minegishi ◽  
Seunghwan Park ◽  
Inho Im ◽  
Takahasi Hanada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Film Growth ◽  
Surface Oxidation ◽  
High Energy ◽  
Zno Films ◽  
Rocksalt Structure ◽  
Structure Changes ◽  
Zno Buffer Layer

ABSTRACTEpitaxial ZnO films are successfully grown on Al2O3 substrates with phase controlled CrN buffer layer using Zn and O-plasma pre-exposures on CrN layers by plasma assisted molecular beam epitaxy (P-MBE). The Zn exposures on CrN layers prior to ZnO film growth result in the formation of rocksalt CrN without surface oxidation. On the other hand, the surface of the initially deposited CrN layers with rocksalt structure changes into hexagonal structured Cr2O3 after O-plasma exposure as confirmed by reflection high-energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HR TEM). Etching studies show that the ZnO films grown on CrN have +C polarity, while the polarity of ZnO on Cr2O3/CrN double buffer is -C polarity. The interdiffusion of Zn and Cr occurs at the ZnO/CrN interface, while the interdiffusion is negligible at the ZnO/ Cr2O3 interface. The interdiffusion of Cr and Zn can be suppressed by inserting a low-temperature ZnO buffer layer in between ZnO and CrN layers, which helps improve the crystal quality of ZnO layers grown with CrN buffer.

Magnetic and Electronic Properties of Fe0.1Sc0.9N/ScN(001)/MgO(001) Films Grown by Radio-Frequency Molecular Beam Epitaxy

2009 ◽  
Vol 1198 ◽  
Author(s):  
Costel Constantin ◽  
Kangkang Wang ◽  
Abhijit Chinchore ◽  
Han-Jong Chia ◽  
John Markert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Buffer Layer ◽  
Rough Surface ◽  
Quantum Interference ◽  
Molecular Beam ◽  
Film Growth ◽  
Magnetic Measurements ◽  
High Energy

AbstractFe0.1Sc0.9N with a thickness of ˜ 380 nm was grown on top of a ScN(001) buffer layer of ˜ 50 nm, grown on MgO(001) substrate by radio-frequency N-plasma molecular beam epitaxy (rf-MBE). The buffer layer was grown at TS ˜ 800 oC, whereas the Fe0.1Sc0.9N film was grown at TS ˜ 420 oC. In-situ reflection high-energy electron diffraction measurements show that the Fe0.1Sc0.9N film growth starts with a combination of spotty and streaky pattern [indicative of a combination of smooth and rough surface]. After ˜ 10 minutes of growth, the pattern converts to a spotty one [indicative of a rough surface]. Towards the end of the Fe0.1Sc0.9N film growth, the spotty patterns transform into even spottier, but also ring-like indicating a polycrystalline behavior. Superconducting quantum interference device magnetic measurements show a ferromagnetic to paramagnetic transition of TC ˜ 370 – 380 K. We calculated a magnetic moment per atom of μ(Fe0.1Sc0.9N) = 0.037 Bohr magneton/ Mn-atom. Based on the carrier concentration measurements (nS(Fe0.1Sc0.9N) = 2.086 × 1019 /cm3), we find that iron behaves as an acceptor. Comparisons are made with similar MnScN (001)/ScN(001)/MgO(001) system.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Molecular beam epitaxy of MgxZn1−xO layers without wurzite-rocksalt phase mixing fromx = 0 to 1 as an effect of ZnO buffer layer

2004 ◽  
Vol 241 (3) ◽  
pp. 599-602 ◽  
Author(s):  
Shizuo Fujita ◽  
Tsuyoshi Takagi ◽  
Hiroshi Tanaka ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Phase Mixing ◽  
Rocksalt Phase ◽  
Zno Buffer Layer

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

2017 ◽  
Vol 10 (04) ◽  
pp. 1750036 ◽  
Author(s):  
Yunxia Zhou ◽  
Jun Zhu ◽  
Xingpeng Liu ◽  
Zhipeng Wu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
High Energy ◽  
Text Type ◽  
Laser Molecular Beam Epitaxy

Ferroelectric Pb(Zr[Formula: see text],Ti[Formula: see text]O3(PZT) thin film was grown on [Formula: see text]-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) [Formula: see text] PZT//(002) [Formula: see text] STO//(001) [Formula: see text] GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45[Formula: see text] in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52[Formula: see text]mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5[Formula: see text]G (100[Formula: see text]mW/cm[Formula: see text] illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
N. Onojima ◽  
J. Suda ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Epitaxial Relationship ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTAluminum nitride (AlN) has been grown on 6H-silicon carbide (SiC) substrates with the non-polar (1120) face using rf plasma-assisted molecular-beam epitaxy (rf-MBE). Reflection high-energy electron diffraction (RHEED) revealed that AlN and 6H-SiC (1120) had an exact epitaxial relationship, i.e., [1120]AlN|[1120]SiC and [0001]AlN∥[0001]SiC. From the result of microscopic Raman scattering spectroscopy, the stacking structure of the AlN epitaxial layer was suggested to be a 2H structure, not a 6H structure. A directly grown AlN layer and layer with AlN low-temperature (LT) buffer layer were investigated based on atomic force microscopy (AFM) and X-ray diffraction (XRD).

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Hai Lu ◽  
William J. Schaff ◽  
Lester F. Eastman ◽  
Colin Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Near Surface ◽  
Low Leakage ◽  
Sheet Charge ◽  
Aln Buffer

AbstractIn this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm-2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm-2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm-3 were routinely achieved in this study.The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Plasma-Assisted Molecular-Beam Epitaxy of ZnO Films on (0001) Al2O3: Effects of the MgO Buffer Layer Thickness

2008 ◽  
Vol 53 (1) ◽  
pp. 271-275 ◽  
Author(s):  
Jae Goo Kim ◽  
Seok Kyu Han ◽  
Dong-Suk Kang ◽  
Sang Mo Yang ◽  
Soon-Ku Hong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Zno Films ◽  
Buffer Layer Thickness

scholarly journals Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Long Giang Bach ◽  
Nam Giang Nguyen ◽  
Van Thi Thanh Ho
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Light Scattering ◽  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Preferred Orientation ◽  
Zno Films ◽  
Texture Surface ◽  
Zno Buffer Layer

We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

Growth of epitaxial ZnO films on Si (111) substrates with Cr compound buffer layer by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 312 (15) ◽  
pp. 2190-2195 ◽  
Author(s):  
Jung-Hyun Kim ◽  
Seok Kyu Han ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Zno Films

Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
T. P. Chin ◽  
J. C. P. Chang ◽  
K. L. Kavanagh ◽  
C. W. Tu ◽  
P. D. Kirchner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Energy ◽  
Threading Dislocation ◽  
Dislocation Loops ◽  
Double Crystal ◽  
X Ray ◽  
Gas Source

ABSTRACTInxGa1−xP(x>0.27) grown on a GaP substrate has a large direct-bandgap, which is suitable for yellow light emission on a transparent substrate. Because of the large lattice mismatch, usually a thick (10–20 μm) graded buffer layer was required to reduce the threading dislocation density. In this work we report that a thin (1.2 μm for x≃0.35), linearly graded buffer layer can filter out dislocations effectively. The structures were grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) intensity oscillations and X-ray double-crystal diffraction were used to control and determine the composition, respectively. Threading dislocations are well confined in the buffer layer, as shown under transmission electron microscopy. Dislocation loops injected into the substrate were observed, similar to those observed in the Six Ge1−x/Si system. X-ray analysis also shows that the 3% mismatched buffer layer is fully relaxed. This relaxed buffer layer then can serve as a substrate for further growth. Homojunction and heterojunction light emitting diodes were fabricated to demonstrate the material quality.

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