Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature

2008 ◽  
Vol 281 (8) ◽  
pp. 2120-2125 ◽  
Author(s):  
Do-Hyun Kim ◽  
Hoonha Jeon ◽  
Geumchae Kim ◽  
Suejeong Hwangboe ◽  
Ved Prakash Verma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Hydrogen incorporation effect in phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering

RSC Advances ◽  
2017 ◽  
Vol 7 (26) ◽  
pp. 16119-16125 ◽  
Author(s):  
Min-Suk Oh ◽  
R. Navamathavan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hydrogen Incorporation ◽  
Doped Zno ◽  
P Type ◽  
Phosphorus Doped

We report on the influence of hydrogen incorporation on the conductivity of phosphorous (P) doped ZnO thin films grown by using radio-frequency (RF) magnetron sputtering.

scholarly journals Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering

2010 ◽  
Vol 25 (12) ◽  
pp. 2407-2414 ◽  
Author(s):  
M. Lalanne ◽  
J.M. Soon ◽  
A. Barnabé ◽  
L. Presmanes ◽  
I. Pasquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Annealing Treatment ◽  
Hexagonal Wurtzite Structure ◽  
Radio Frequency Magnetron ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Doped Zno ◽  
Relationship Of

Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on conventional glass substrates at room temperature. The structural, electrical, and optical properties of these films as a function of argon pressure and film thicknesses were studied. All the films crystallized with the hexagonal wurtzite structure. The x-ray diffraction studies show that the ZnO:Ga films are highly oriented with their crystallographic c-axis perpendicular to the substrate. We discuss a methodology of using a “standardized platform” for comparison of samples deposited at different pressures, which provides an insight into the defect–resistivity relationship of each sample with respect to their microstructure. After the first annealing, the electrical properties of the films are dependent on the atmosphere used during postdeposition annealing treatment. A resistivity of 2.5 × 10−3 Ω · cm was obtained after vacuum annealing, and the films became an insulator after air annealing. The reproducibility of this treatment was verified. The average transmittance of all ZnO:Ga thin films is more than 85% in the visible range.

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