Piezoresistance in Strained Silicon and Strained Silicon Germanium

2006 ◽  
Vol 958 ◽  
Author(s):  
Jacob Richter ◽  
M. B. Arnoldus ◽  
J. Lundsgaard Hansen ◽  
A. Nylandsted Larsen ◽  
O. Hansen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Experimental Results ◽  
Strained Silicon ◽  
Silicon Substrates ◽  
Temperature Dependency ◽  
Strained Layer

ABSTRACTThis paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive strained layer when compared to the unstrained material. The results show that one can tune the piezoresistance by tuning the strain in the piezoresistor and thus tailor the performance of the device. The obtained results show an increase in the piezoresistance effect of 35% in compressive strained silicon germanium and a decrease in the piezoresistance effect in tensile strained silicon of 24%. Furthermore, the results show that the piezoresistance of a tensile strained silicon crystal has a smaller temperature dependency compared to that of unstrained silicon. The piezoresistance effect decreases by 7% in tensile strained silicon compared to the piezoresistance effect decrease in silicon of 18% when changing the temperature from 30°C to 80°C.

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy

2019 ◽  
Vol 514 ◽  
pp. 124-129
Author(s):  
Yukun Zhao ◽  
Wenxian Yang ◽  
Shulong Lu ◽  
Yuanyuan Wu ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
Silicon Substrates ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

scholarly journals Doping of GaP layers grown by molecular-beam epitaxy on silicon substrates

2018 ◽  
Vol 1124 ◽  
pp. 022022 ◽  
Author(s):  
A A Lazarenko ◽  
M S Sobolev ◽  
E V Pirogov ◽  
E V Nikitina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

scholarly journals Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)]

1996 ◽  
Vol 68 (8) ◽  
pp. 1168-1169 ◽  
Author(s):  
J. Kolodzey ◽  
P. A. O’Neil ◽  
S. Zhang ◽  
B. A. Orner ◽  
K. Roe ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Substrates

Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

2013 ◽  
Vol 64 ◽  
pp. 543-551 ◽  
Author(s):  
Shaojian Su ◽  
Dongliang Zhang ◽  
Guangze Zhang ◽  
Chunlai Xue ◽  
Buwen Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices
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