Tunnel QW-QDs InGaAs-InAs High Gain Medium for All-Epitaxial VCSELs

2006 ◽  
Vol 959 ◽  
Author(s):  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Jobert van Eisden ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Wells ◽  
Active Medium ◽  
Continuous Wave ◽  
Optical Power ◽  
High Gain ◽  
Wave Mode ◽  
Energy Separation ◽  
Cavity Surface ◽  
Discrete Energy ◽  
Emitting Lasers

ABSTRACTStructures of tunnel-coupled pairs consisting of InGaAs (In composition was varied from 29 to 36%) quantum wells (QW) grown on top of shape-engineered self-assembled InAs quantum dots (QW-on-QDs) were employed to increase the maximum saturated gain of QD-based laser active medium. Room temperature optical properties of tunnel-coupled well-on-dots structures at low excitation were found to be sensitive to energy separation between GS energies of QDs and QW. The spectra also show that QD-related photoluminescence (PL) tends to peak at discrete energy separations from the QW peak, in this case multiples of ∼ 35meV (LO phonon energy). The optimized GS energy separation between QW and QDs was found to be close to the energy of the LO phonon. This structure demonstrated narrowing of the QD PL line down to 21.6 meV at T=77K, indicating efficient resonant tunneling of carriers from QW into QD ensemble states. All-epitaxial vertical cavity surface emitting lasers (VCSELs) with triple-pair tunnel QW-on-QDs as active medium demonstrated continuous wave mode lasing. Tunnel QDs-QW VCSELs exhibited 1.8 mA (Jth ∼ 800 A/cm2) minimum threshold current at QD GS emission wavelength, 1135 nm, with 0.7mW optical power and 12% light-current efficiency.

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

2015 ◽  
Vol 106 (15) ◽  
pp. 151102 ◽  
Author(s):  
S. Sprengel ◽  
A. Andrejew ◽  
F. Federer ◽  
G. K. Veerabathran ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

780 nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

1996 ◽  
Vol 32 (14) ◽  
pp. 1287 ◽  
Author(s):  
H.-E. Shin ◽  
Y.-G. Ju ◽  
J.-H. Shin ◽  
J.-H. Ser ◽  
T. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

850-NM VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Light Output ◽  
Cavity Surface ◽  
Light Output Power ◽  
Si Substrates ◽  
Continuous Wave Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.

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