Wafer Level Modeling of Electrochemical-Mechanical Polishing (ECMP)

2007 ◽  
Vol 991 ◽  
Author(s):  
Daniel Truque ◽  
Xiaolin Xie ◽  
Duane Boning

ABSTRACTIn this work, we propose a wafer level dynamic ECMP model based on time-evolving current density distributions across the wafer. The copper layer on the wafer surface is discretized, and the potential and current density distributions are calculated based on the applied voltage zones and metal film thicknesses across the wafer. The copper removal rate is proportional to the current density, and thus the copper thickness (and conductance) can be calculated as a function of position on the wafer and polish time. Using a time-stepping simulation, the model is able to capture the wafer level non-uniformity and time-dependence of ECMP removal. The model is also able to capture the time-varying voltage zones used in ECMP, and can be used to find optimal voltage zone control schemes to achieve improved wafer-level uniformity.

Author(s):  
XIAOZHE YANG ◽  
Xu Yang ◽  
Haiyang Gu ◽  
Kentaro Kawai ◽  
Kenta Arima ◽  
...  

Abstract Slurryless electrochemical mechanical polishing (ECMP) is very effective in the polishing of silicon carbide (SiC) wafers. To achieve a high material removal rate (MRR) of SiC wafer using ECMP with low electrical energy loss, charge utilization efficiency in the anodic oxidation of the SiC surface was investigated and the underlying mechanism was clarified by modeling the anodic oxidation system of SiC in 1 wt% NaCl aqueous solution. The charge utilization efficiency in the anodic oxidation of SiC was found to be constant when the current density was less than 20 mA/cm2 and significantly decreased when the current density was greater than 30 mA/cm2, resulting in a significant reduction in the MRR. Modeling of the anodic oxidation system indicates that the charge utilization efficiency depended on the potential applied on the SiC surface: the oxidation of SiC occupied the dominant position in the anodizing system when the potential is lower than 25 V vs Ag|AgCl, charge utilization efficiency greatly decreased when the applied potential was greater than 25 V owing to the occurrence of oxidations of the H2O and Cl-. This research provides both a theoretical and practical foundation for using ECMP to polish SiC wafers.


Author(s):  
Mayank Srivastava ◽  
Pulak M Pandey

The present experimental investigation attempts to understand and address the effect of ultrasonic vibrations on material removal in the polishing of silicon wafers (1 0 0). The requisite finishing experimentations were performed on an indigenously developed experimental arrangement of double-disc chemical assisted magnetorheological finishing (DDCAMRF) process with longitudinal vibrations. The MR fluid used in the experiments consists of a water-based suspension prepared by mixing suitable amounts of carbonyl iron particles (CIPs), abrasive particles, and additives or stabilizers. The prepared MR fluid uses both mechanics and chemistry to finish the silicon surface. Mechanics is mainly responsible for micro-scratching of silicon surface, which gets “softened” by hydration utilizing DI water in the MR fluid. In this study, the ‘response surface methodology (RSM)’ was chosen for designing the experiments to evaluate the significance of different process factors, namely polishing speed, abrasive concentration, and ultrasonic power on the material removal rate (MRR) in DDCAMRF process. The material removed from the wafer surface was measured using the precision digital weighing balance. It was observed that the MRR was found to increase with the increase in various process factors used. Further, analysis of variance (i.e., ANOVA) technique with a 95% confidence interval was performed to analyze the significant contribution of different process factors on MRR. The validation of developed model was done by performing experiments on random and optimized set of process factors. From, the statistical investigation it was discovered that ultrasonic power has highest contribution of 57.9% on MRR, followed by the polishing speed (13.3%), and abrasive concentration (12.5%). Furthermore, a genetic algorithm optimization tool was utilized to obtain optimum set of process parameters to maximize MRR.


2018 ◽  
Vol 238 ◽  
pp. 03003
Author(s):  
Yaling Li ◽  
Wenqiang Jiang ◽  
Ruyu Li

2,4,6-Trinitrophenol is a toxic aromatic nitro-compounds that widely used in pharmaceutical, chemical and pesticide production. Due to its stable structure and poor biodegradability, advanced electrocatalytic oxidation technology was selected to treat simulated wastewater. The goal of the present work is to optimize the electrolysis conditions such as current density, electrolysis pH, and electrolyte concentration. A Pt modified TiO2 electrode was chosen as the anode accompanied with a titanium electrode of the same size as the cathode The results showed that the removal efficiency of 2,4,6-Trinitrophenol was the highest when the current density was 20mA/cm2, electrolyte pH=5, electrolyte concentration was 2 g/L. Under the optimal condition, the removal rate of 2,4,6-Trinitrophenol reached 99.76% after 120 minutes electrolysis. The decay of TNP could also be described by the pseudo-first-order kinetics formula with respect to TNP concentration. Therefore, electrocatalytic oxidation technology might provide an effective method for the degradation of nitroaromatic organic compounds.


2015 ◽  
Vol 180 ◽  
pp. 313-330 ◽  
Author(s):  
Geraint Williams ◽  
Nick Birbilis ◽  
H. Neil McMurray

The early stages of localised corrosion affecting magnesium (Mg) surfaces when immersed in aqueous sodium chloride (NaCl) solutions involves the propagation of dark regions, within which both anodic metal dissolution and cathodic hydrogen evolution occur. For nominally “pure” Mg, these dark areas can either take the form of discs which expand radially with time, or filiform-like tracks which lengthen with time. For Mg surfaces which display disc-form corrosion features in concentrated NaCl electrolyte, a transition to filiform corrosion (FFC) is observed as the concentration is decreased, indicating ohmic constraints on radial propagation. A similar effect is observed when Mg specimens of different iron impurity are immersed in a fixed, high concentration NaCl solution, where disc-form corrosion is observed on samples having ≥280 ppm Fe, but FFC predominates at ≤80 ppm Fe. An in situ scanning vibrating electrode technique (SVET) is used to determine current density distributions within the propagating corrosion features. Cathodic current density values of between −100 and −150 A m−2 measured in central areas of disc-like features are sufficient to sustain the radial growth of a local anode at the perimeter of the discs. However, for high purity Mg specimens (≤80 ppm Fe), cathodic current densities of −10 A m−2 or less are measured over FFC affected regions, indicating that linear propagation arises when there is insufficient cathodic current produced on the corroded surface to sustain radial growth. The results are consistent with surface control of localised corrosion propagation in concentrated electrolyte, but ohmic control in dilute, lower conductivity NaCl solution.


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