The Role of Metal and Passivation Defects in Electromigration-Induced Damage in Thin Film Conductors

1981 ◽  
Vol 10 ◽  
Author(s):  
J. R. Lloyd ◽  
P. M. Smith ◽  
G. S. Prokop
Keyword(s):  
Thin Film ◽  
Passivation Layer ◽  
Major Contributor ◽  
Stress Gradients

The effect of both metal defects (nicks and scratches) and passivation defects (Griffith cracks or pinholes) was theoretically and experimentally investigated. Flux divergences due to temperature and stress gradients are considered. It was observed that failure near a severe metal defect or at a defect in the passivation layer can be a major contributor to electromigration-induced lifetime degradation.

Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

2017 ◽  
Vol 38 (4) ◽  
pp. 469-472 ◽  
Author(s):  
Yu-Chieh Chien ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Hua-Mao Chen ◽  
Yu-Ching Tsao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

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