Ion Implantation Damage in Aluminum Studied by Quantitative Electron Chanelling and Tem.
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ABSTRACTElectron chanelling linewidth changes in aluminum have been measured as a function of dose for boron and aluminum ion implantation. Weak beam TEM observations assist interpretation of the results by showing the nature and degree of the damage. For self implantation, a linear relationship between dose, linewidth, and dislocation density has been found up to 3×1017ions/cm2. For boron implantation, a new point-like defect appears at the higher boron concentrations, giving a much slower increase of chanelling linewidth with dose above l×1016 ions/cm2. Boron interaction with the damage stabilizes higher damage acumilations than for sel f-i mpl antati on.
2007 ◽
Vol 28
(12)
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pp. 1089-1091
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WP-A2 the use of a scanned continuous laser beam for annealing of ion implantation damage in silicon
1978 ◽
Vol 25
(11)
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pp. 1357-1357
1986 ◽
Vol 4
(4)
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pp. 2174-2176
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2016 ◽
Vol 55
(4S)
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pp. 04EG05
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