InGaAs Solar Cells Grown on Wafer-Bonded InP/Si Epitaxial Templates

2007 ◽  
Vol 1012 ◽  
Author(s):  
James M. Zahler ◽  
Katsuaki Tanabe ◽  
Corinne Ladous ◽  
Tom Pinnington ◽  
Frederick D. Newman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrates ◽  
Current Voltage ◽  
Metal Organic ◽  
Engineered Substrates ◽  
The Cost ◽  
Inp Substrates ◽  
Organic Chemical Vapor Deposition

AbstractInP/Si engineered substrates formed by wafer bonding and layer transfer have the potential to significantly reduce the cost and weight of III-V compound semiconductor solar cells. InP/Si substrates were prepared by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. Following thinning to remove damage caused by the implantation and exfoliation from the surface of the InP transferred film, InGaAs solar cells lattice-matched to bulk InP were grown on those substrates using metal-organic chemical vapor deposition. The photovoltaic current-voltage characteristics of the InGaAs cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, thus providing an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications.

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (7) ◽  
pp. 1642-1650 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Yuan Li ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Light Emitting ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.

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