High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates
2018 ◽
Vol 6
(7)
◽
pp. 1642-1650
◽
Keyword(s):
High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.
2007 ◽
Vol 46
(No. 40)
◽
pp. L970-L972
◽
2013 ◽
Vol 5
(6)
◽
pp. 2111-2117
◽
2006 ◽
Vol 50
(2)
◽
pp. 119-124
◽
2010 ◽
Vol 49
(4)
◽
pp. 04DG14
◽
Keyword(s):