The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

scholarly journals Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

RSC Advances ◽  
2021 ◽  
Vol 11 (54) ◽  
pp. 34095-34100
Author(s):  
Xue Peng ◽  
Yanfei Lv ◽  
Li Fu ◽  
Fei Chen ◽  
Weitao Su ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Cuprous Oxide ◽  
Fluorescence Properties ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Photoluminescence Properties ◽  
Band Bending ◽  
Carrier Traps

The presence of cuprous oxide results in band bending at the interface between cuprous phosphide and cuprous oxide, forming carrier traps, which improves the fluorescence properties of cuprous phosphide.

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending

2014 ◽  
Vol 778-780 ◽  
pp. 566-570 ◽  
Author(s):  
Wei Huang ◽  
Xi Liu ◽  
Xue Chao Liu ◽  
Tian Yu Zhou ◽  
Shi Yi Zhuo ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Interface Energy ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Band Bending ◽  
X Ray ◽  
Vacuum Chambers ◽  
Transmission Electron ◽  
Electron Transport Properties

Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

Wettability in pressure infiltration of SiC and oxidized SiC particle compacts by molten Al and Al-12wt%Si alloy

2007 ◽  
Vol 22 (8) ◽  
pp. 2273-2278 ◽  
Author(s):  
J.M. Molina ◽  
J. Tian ◽  
C. Garcia-Cordovilla ◽  
E. Louis ◽  
J. Narciso
Keyword(s):  
Contact Angle ◽  
Oxide Layer ◽  
Low Temperatures ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Threshold Pressure ◽  
Pressure Infiltration ◽  
Surface Conditions ◽  
Infiltration Behavior ◽  
Sic Particle

The infiltration behavior of compacts of SiC particles in two surface conditions, as-received and thermally oxidized, was investigated by using pure Al and Al-12wt%Si as infiltrating metals. Analysis of the threshold pressure for infiltration revealed that the process is governed by the same contact angle for all different systems, no matter the metal or particle condition. This leads to the conclusion that oxidation does not modify the wetting characteristics of the particles, most probably because they are already covered by a thin native oxide layer that remains unaltered in processing routes involving short contact times and low temperatures, such as actual conditions of pressure infiltration at 700 °C.

Nano-Thick Amorphous Oxide Layer Produced by Plasma on Type 316L Stainless Steel for Improved Corrosion Resistance Under Plastic Deformation

CORROSION ◽  
10.5006/2674 ◽  
2018 ◽  
Vol 74 (9) ◽  
pp. 1011-1022 ◽  
Author(s):  
Megan Mahrokh Dorri ◽  
Stéphane Turgeon ◽  
Maxime Cloutier ◽  
Pascale Chevallier ◽  
Diego Mantovani
Keyword(s):  
Plastic Deformation ◽  
Stainless Steel ◽  
Oxide Layer ◽  
Electrochemical Impedance ◽  
Open Circuit ◽  
Localized Corrosion ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Amorphous Oxide ◽  
Amorphous Oxide Layer

Localized corrosion constitutes a major concern in medical devices made of stainless steel. The conventional approach to circumvent such a problem is to convert the surface polycrystalline microstructure of the native oxide layer to an amorphous oxide layer, a few micrometers thick. This process cannot, however, be used for devices such as stents that undergo plastic deformation during their implantation, especially those used in vascular surgery for the treatment of cardiac, neurological, and peripheral vessels. This work explores the feasibility of producing a nano-thick plastic-deformation resistant amorphous oxide layer by plasma-based surface modifications. By varying the plasma process parameters, oxide layers with different features were produced and their properties were investigated before and after clinically-relevant plastic deformation. These properties and the related corrosion mechanisms were mainly evaluated using the electrochemical methods of open-circuit potential, cyclic potentiodynamic polarization, and electrochemical impedance spectroscopy. Results showed that, under optimal conditions, the resistance to corrosion and to the permeation of ions in a phosphate buffered saline, even after deformation, was significantly enhanced.

scholarly journals Эволюция физико-химических свойств поверхности GaSb(100) в растворах сульфида аммония

2019 ◽  
Vol 53 (7) ◽  
pp. 908
Author(s):  
М.В. Лебедев ◽  
Т.В. Львова ◽  
А.Л. Шахмин ◽  
О.В. Рахимова ◽  
П.А. Дементьев ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Treatment Time ◽  
Solution Concentration ◽  
Native Oxide ◽  
Semiconductor Surface ◽  
Native Oxide Layer ◽  
Force Microscopy ◽  
Fermi Level Pinning ◽  
Ammonium Sulfide

AbstractVarious conditions of passivation of the GaSb(100) surface by ammonium sulfide ((NH_4)_2S) solutions depending on the solution concentration, solvent, and treatment time are investigated by X-ray photoelectron spectroscopy and atomic-force microscopy. It is shown that treatment of the GaSb(100) surface by any (NH_4)_2S solution leads to removal of the native oxide layer from the semiconductor surface and the formation of a passivating layer consisting of various gallium and antimony sulfides and oxides. The surface with the lowest roughness (RMS = 0.85 nm) is formed after semiconductor treatment with 4% aqueous ammonium sulfide solution for 30 min. Herewith, the atomic concentration ratio Ga/Sb at the surface is ~2. It is also found that aqueous ammonium sulfide solutions do not react with elemental antimony incorporated into the native-oxide layer. The latter causes a leakage current and Fermi-level pinning at the GaSb(100) surface. However, a 4% (NH_4)_2S solution in isopropanol removes elemental antimony almost completely; herewith, the semiconductor surface remains stoichiometric if a treatment duration is up to 13 min.

Influence of Formative Native Oxide Layer on Mechanical Polished Cu Surface on Fluorescence Spectrum

2012 ◽  
Vol 41 (7) ◽  
pp. 874-877
Author(s):  
董军 DONG Jun ◽  
赵久强 ZHAO Jiuqiang ◽  
李绪强 LI Xuqiang ◽  
陈佳 Chen Jia ◽  
郑海荣 ZHENG Hairong
Keyword(s):  
Oxide Layer ◽  
Fluorescence Spectrum ◽  
Native Oxide ◽  
Native Oxide Layer

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7170-7177 ◽  
Author(s):  
Christian Ehlers ◽  
Stefan Kayser ◽  
David Uebel ◽  
Roman Bansen ◽  
Toni Markurt ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Amorphous Silicon ◽  
Oxide Layer ◽  
Silicon Surface ◽  
Layer Growth ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Uv Laser ◽  
Subsequent Layer

An in situ method for selectively heating a substrate by a laser pulse was modelled and investigated experimentally.

Silicon Surface Preparation and Passivation by Vapor Phase of Heavy Water

2009 ◽  
Vol 145-146 ◽  
pp. 181-184 ◽  
Author(s):  
Andrea E. Pap ◽  
Zsolt Nényei ◽  
Gábor Battistig ◽  
István Bársony
Keyword(s):  
Silicon Surface ◽  
Surface States ◽  
Surface Preparation ◽  
Hydrogen Desorption ◽  
Dangling Bonds ◽  
Hydrogen Atoms ◽  
Surface Band ◽  
Band Bending ◽  
Chemical Treatments ◽  
Wet Chemical

The well known wet chemical treatments of the silicon surface and its native oxidation in air cause a high density of interface states, which predominantly originate from dangling bonds strained bonds or from bonds, between adsorbates and silicon surface atoms. Therefore, a number of wet-chemical treatments have been developed for ultraclean processing in order to produce chemically and electronically passivated surfaces [1]. The saturation of dangling bonds by hydrogen removes the surface states and replaces them by adsorbate-induced states, which influence the surface band-bending [2]. The first thermal hydrogen desorption peak from a hydrogen passivated Si surface in vacuum or inert gas ambient can be detected at around 380°C [3,4]. Simultaneously the combination of the hydrogen atoms of neighboring dihydrides generates a pair of dangling bonds. At around 480-500°C dangling bonds are generated on the silicon surface by desorption of the remaining hydrogen [5]. At that moment the silicon surface becomes extremely reactive.

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