Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Sputtering ◽  
Processing Parameters ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

scholarly journals Исследование влияния особенностей конструкции установки магнетронного распыления на электрические и оптические свойства пленок оксида индия-олова

2021 ◽  
Vol 55 (4) ◽  
pp. 360
Author(s):  
Д.А. Кудряшов ◽  
А.А. Максимова ◽  
Е.А. Вячеславова ◽  
А.В. Уваров ◽  
И.А. Морозов ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Wavelength Region ◽  
Electrical And Optical Properties ◽  
Short Wavelength Region ◽  
Order Of Magnitude ◽  
Oxygen Addition ◽  
Ito Films

The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2−14)·10^−2 Ohm·cm) for different positions of the substrate on the substrate holder along the radius in the range of 0−14cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO

Optical and Electrical Properties of Indium Tin Oxide (ITO) Thin Films Prepared by Thermal Evaporation Method on Polyethylene Terephthalate (PET) Substrate

2012 ◽  
Vol 545 ◽  
pp. 393-398 ◽  
Author(s):  
Mohammed Khalil Mohammed Ali ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin ◽  
M.G. Faraj
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Thermal Evaporation ◽  
Optical And Electrical Properties ◽  
Thermal Evaporation Method ◽  
Ito Thin Films ◽  
Ito Films

This work describe the optical and electrical properties of indium tin oxide (ITO) thin films prepared by thermal evaporation method on flexible plastic substrate (polyethylene terephthalate (PET)). The optical transmission and absorption of ITO films in the visible and UV rang have been studied. The resistivity, sheet resistant, carrier concentration and mobility have been evaluated by Hall Effect measurement. The surface morphology and roughness were investigated by atomic force microscopy (AFM). The results indicate that the optical transmission greater than 85% over the visible rang and it was found to be strongly dependent on the thickness of ITO films. The Resistivity and sheet resistant with low values (10-4Ω-cm, 9.22 Ω/ respectively) were obtained and ties values were increased with ITO thin films thickness increasing .AFM investigation showed that the roughness surface of (8 – 30) RMS have been obtained over different thickness of ITO films. The obtained results of the deposited films by this method were analyzed. Details of sample preparation, experimental methods and results are given and discussed.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Sign in / Sign up

Export Citation Format

Share Document