Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

2008 ◽  
Vol 1076 ◽  
Author(s):  
Koushik Banerjee ◽  
Shubhrangshu Mallick ◽  
Siddhartha Ghosh ◽  
Elena Plis ◽  
Jean Baptiste Rodriguez ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Avalanche Photodiodes ◽  
Avalanche Photodiode ◽  
Excess Noise ◽  
Single Carrier ◽  
Strained Layer Superlattice ◽  
Strain Layer ◽  
Strain Layer Superlattice ◽  
Noise Factors

ABSTRACTMid-wavelength infrared (MWIR) avalanche photodiodes (APDs) were fabricated using Indium Arsenide- Gallium Antimonide (InAs-GaSb) based strain layer superlattice (SLS) structures. They were engineered specifically to have either electron or hole dominated ionization. The gain characteristics and the excess noise factors were measured for both devices. The electron dominated p+-n−-n APD with a cut-off wavelength of 4.13 μm at 77 K had a maximum multiplication gain of 1800 measured at -20 V while that of the hole dominated n+-p--p structure with a cut-off wavelength of 4.98 μm at 77 K was 21.1 at -5 V at 77 K. Excess noise factors were measured between 1-1.2 up to a gain of 800 and between 1-1.18 up to a gain of 7 for electron and hole dominated APDs respectively.

Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

Midwavelength Infrared Avalanche Photodiode Using InAs–GaSb Strain Layer Superlattice

2007 ◽  
Vol 19 (22) ◽  
pp. 1843-1845 ◽  
Author(s):  
S. Mallick ◽  
K. Banerjee ◽  
S. Ghosh ◽  
J. B. Rodriguez ◽  
S. Krishna
Keyword(s):  
Avalanche Photodiode ◽  
Strain Layer ◽  
Strain Layer Superlattice

Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes

2010 ◽  
Author(s):  
Siddhartha Ghosh ◽  
Koushik Banerjee ◽  
Qing Duan ◽  
Christoph H. Grein ◽  
Elena A. Plis ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Carrier Multiplication ◽  
Strain Layer ◽  
Strain Layer Superlattice

Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode

2007 ◽  
Vol 91 (24) ◽  
pp. 241111 ◽  
Author(s):  
Shubhrangshu Mallick ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Elena Plis ◽  
Jean Baptiste Rodriguez ◽  
...  
Keyword(s):  
Avalanche Photodiode ◽  
Midwave Infrared ◽  
Strain Layer ◽  
Strain Layer Superlattice

A Novel Structure of a-SiN:H/a-Si:H Multilayer Avalanche Photodiode (MAPD)

1993 ◽  
Vol 297 ◽  
Author(s):  
Jiao Lihong ◽  
Meng Zhiguo ◽  
Sun Zhonglin
Keyword(s):  
Reverse Bias ◽  
Impact Ionization ◽  
Incident Light ◽  
Avalanche Photodiode ◽  
Low Noise ◽  
Excess Noise ◽  
Novel Structure ◽  
Ito Glass ◽  
Noise Factors ◽  
The Impact

Because of the lower density of interface states in a-Si:H/a-SiN:H than that in a-Si:H/a-SiC:H, an a-Si:H/a-SiN multilayer reach-through avalanche photodiode is fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD) . In order to improve the performance of the a-Si:H/a-SiN:H APD'S, a novel structure is used. By controlling the deposition ratio of silicon and nitrogen of amorphous SiN,the valence band top of a-Si:H is deeper than that of a-SiN:H, that is, the a-Si :H/a-SiN: H system has the electron potential well in a-Si:H, while the hole well is in a-SiN:H, thus we can successfully suppress the hole impact ionization, correspondingly enhance the electron impact ionization effectively.The measurement of current versus voltage is employed to study the multiplication factors and the impact ionization coefficients. The characteristics of a-Si:H/a-SiN:H APD's,such as I-V curves, optical gains, impact ionization rates, excess noise factors, the relative response and the relationship between the breakdown voltage and wavelength, are studied. The electron multiplication factor is Mc=4.5 at reverse bias V=12v. An optical gain of 3.7 at reverse bias VR=12v and an incident light power Pin=3μw is obtained. Homo junction a-Si:H reach-through APD's and homojunction a-Si:H APD's are also fabricated for comparison.The results show that the novel a-Si:H/a-SiN:H APD's is promising in high-gain, low-noise photodetectors.

EMPIRICAL FORMULAE FOR EXCESS NOISE FACTOR WITH DEAD SPACE FOR SINGLE CARRIER MULTIPLICATION

2011 ◽  
Vol 10 (03) ◽  
pp. 315-321
Author(s):  
AHMAD H. DEHWAH ◽  
IDRIS A. AJIA ◽  
JOHN S. MARSLAND
Keyword(s):  
Dead Space ◽  
Avalanche Photodiode ◽  
Noise Factor ◽  
Excess Noise ◽  
Excess Noise Factor ◽  
Single Carrier ◽  
Carrier Multiplication ◽  
Space Effect ◽  
The Dead ◽  
Deterministic Limit

In this letter, two empirical equations are presented for the calculation of the excess noise factor of an avalanche photodiode for single carrier multiplication including the dead space effect. The first is an equation for calculating the excess noise factor when the multiplication approaches infinity as a function of parameters that describe the degree of the dead space effect. The second equation can be used to find the minimum value of the excess noise factor for any multiplication when the dead space effect is completely dominant, the so called "deterministic" limit. This agrees with the theoretically known equation for multiplications less than or equal to two.

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