Utilization of Charged Particle Backscattering to Study the Near Surface Region of Glasses. Application to Depth Profiling of Lanthanium, Cerium, Thorium and Uranium Induced by Aqueous Leaching.

1981 ◽  
Vol 11 ◽  
Author(s):  
Patrick Trocellier ◽  
Bernard Nens ◽  
Charles Engelmann
Keyword(s):  
Charged Particle ◽  
Depth Profiling ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Heavy Elements ◽  
Chemical Information ◽  
Concentration Profiles ◽  
Near Surface ◽  
Particle Backscattering

The Rutherford backscattering technique is useful for the determination of the concentration profiles of some heavy elements in the near surface region of glasses, but is not able to provide chemical information on the elements detected.

scholarly journals Improved Near Surface Heavy Impurity Detection by a Novel Charged Particle Energy Filter Technique

1994 ◽  
Vol 354 ◽  
Author(s):  
K. Ishibashi ◽  
B.K. Patnaik ◽  
N. R. Parikh ◽  
H. Tateno ◽  
J.D. Hunn
Keyword(s):  
Charged Particle ◽  
Integrated Circuits ◽  
Typical Feature ◽  
Particle Energy ◽  
Silicon Wafers ◽  
Rutherford Backscattering ◽  
Trace Impurities ◽  
Near Surface ◽  
Pulse Pileup ◽  
Vlsi Technology

AbstractAs the typical feature size of silicon integrated circuits, such as in VLSI technology, has become smaller, the surface cleanliness of silicon wafers has become more important. Hence, detection of trace impurities introduced during the processing steps is essential. A novel technique, consisting of a “Charged Particle Energy Filter (CPEF)” used in the path of the scattered helium ions in the conventional Rutherford Backscattering geometry, is proposed and its merits and limitations are discussed. In this technique, an electric field is applied across a pair of plates placed before the detector so that backscattered particles of only a selected energy range go through slits to strike the detector. This can be used to filter out particles from the lighter substrate atoms and thus reduce pulse pileup in the region of the impurity signal. The feasibility of this scheme was studied with silicon wafers implanted with 1×1014 and 1×1013 14pe/cm2 at energy of 35 keV, and a 0.5 MeV He+ analysis beam. It was found that the backscattered ion signals from the Si atoms can be reduced by more than three orders of magnitude. This suggests the detection limit for contaminants can be improved by at least two orders of magnitude compared to the conventional Rutherford Backscattering technique. This technique can be incorporated in 200–300 kV ion implanters for monitoring of surface contaminants in samples prior to implantation.

Diffusion and Subsurface Bonding of Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
A. E. Jaworowski ◽  
L. S. Wielunski
Keyword(s):  
Molecular Hydrogen ◽  
Depth Profiling ◽  
Surface Region ◽  
Hydrogen Trapping ◽  
Complex Motion ◽  
Near Surface ◽  
Temperature Range ◽  
Molecule Formation ◽  
Trapping Process

ABSTRACTThe hydrogen depth profiling in the near-surface region in silicon reveals the existence of a subsurface hydrogen layer. This layer acts as a barrier to diffusion. The observed subsurface hydrogen profile rises and then drops off sharply with increasing depth and is stable up to 770 K. Our annealing data indicate a rather complex motion of monatomic and molecular hydrogen in the near-surface region (<1500 A) in the temperature range 300 – 800 K. The subsurface molecule formation represents the dominant hydrogen trapping process in silicon.

scholarly journals Application of Nuclear Techniques to the Investigation of the Oxidation Behavior of Ion-Implanted Steels

2019 ◽  
Vol 7 ◽  
pp. 222
Author(s):  
F. Noli ◽  
P. Misaelides
Keyword(s):  
Nuclear Reaction ◽  
Oxidation Behavior ◽  
Depth Distribution ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Aluminum Concentration ◽  
Near Surface ◽  
Depth Profiles ◽  
Ion Implanted

The oxidation behavior of ion-implanted steel samples in air, using Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectroscopy (RBS) techniques. Austenitic stainless steel AISI 321 (Fe/Crl8/Ni8/Mn2/Ti) samples implanted with magnesium-, aluminum- and zirconium-ions (implantation energy 40 keV, dose: 1-1017 to 2-1017 ions/cm2) were oxidized in air in the temperature region 450-650 °C for several periods of time. The above implants were selected on the basis of the affinity to oxygen, as well as their ability to form protective oxides as MgO, AI2O3, Zr02 in order to improve the oxidation resistance of steel. The determination of the oxygen concentration and depth-profiles was performed by means of the 160(d, p)170 nuclear reaction. Rutherford Backscattering Spectroscopy was applied to investigate the near-surface layers and to determine the depth profiles of the implanted ions. The determination of the aluminum concentration and the depth distribution of the Al-ions was performed using the resonance at 992 keV of the 27Al(p, 7)28Si nuclear reaction whereas the concentration and the depth distribution of the Mg-ions by the means of the 24Mg(o;, p)27Al reaction. The excitation function of the 24Mg(a:, p)27Al nuclear reaction was studied in the energy region 4600-5000 keV and absolute cross section data allowing the determination of the Mg-profile were determined for this purpose.

Hgl−xCdxTe Near Surface Characterization using Computer Aided Rutherford Backscattering Spectrometry

1986 ◽  
Vol 90 ◽  
Author(s):  
T.-M. Kao ◽  
T. W. Sigmon
Keyword(s):  
Surface Characterization ◽  
Rutherford Backscattering Spectrometry ◽  
Grazing Angle ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Structural Defects ◽  
Near Surface ◽  
Lattice Disorder ◽  
Defect Densities ◽  
Distributed Dislocations

ABSTRACTIn this work, we report the use of Rutherford backscattering(RBS) measurements and computer simulations to provide accurate stoichiometry information and semi-quantitative defect densities for the near surface region of Hg1−xCdxTe (MCT). The accuracy of the Hg1−xCdx Te x-values determined by our method is found to be comparable to other commonly used methods, such as FTIR or the electron microprobe. The data obtained as structural defects from RBS channeling measurements are in basic agreement with other techniques, such as chemical etching. The sensitivity of the channeling measurement to uniformly distributed dislocations is found to be about 107−108 cm−2, however, for dislocations forming subgrains, the detectable level of dislocation comes to 105 – 106 cm−2. The depth profiles of lattice disorder resulting from ion implantation into MCT are also extracted from RBS channeling measurements using these simulation programs. These profiles are found to closely match the calculated profiles for the displaced atoms calculated using an implantation modeling program (TRIM). We also report on the use of channeling-in-grazing-angle-out technique for evaluating the stoichiometry of the first few monolayers of the MCT surface.

scholarly journals A Review on Recent Developments in Deuteron Induced Reactions Enhancing NRA Capabilities

2020 ◽  
Vol 16 ◽  
pp. 17
Author(s):  
M. Kokkoris ◽  
P. Misaelides ◽  
A. Lagoyannis ◽  
R. Vlastou ◽  
C. T. Papadopoulos ◽  
...  
Keyword(s):  
Differential Cross Section ◽  
Cross Section ◽  
Differential Cross ◽  
Ion Beam ◽  
Depth Profiling ◽  
Light Element ◽  
Nuclear Reaction Analysis ◽  
Light Elements ◽  
Near Surface

Nuclear Reaction Analysis (NRA) is well established as one of the principal IBA methods nowadays. Among the most important NRA characteristics are its high iso- topic selectivity, its enhanced sensitivity for many nuclides, the capability of least destructive depth profiling and the possibility of simultaneous analysis of more than one light element in near–surface layers of materials. Moreover, in the particular case when deuterium is used as probing beam, critical advantages for NRA studies emerge. As NRA quantifies individual light isotopes absolutely, and can depth pro- file with nanometer resolution, it is the most suitable ion beam technique for the determination of the concentration and depth profiling of light elements in complex matrices. However, as already pointed out in the recent literature, the application of NRA to the determination of the concentration and the depth profiling of light elements is frequently impeded by the lack of adequate and/or reliable experimental differential cross section data. It is the ambition of the present work to contribute in the fields of differential cross section measurements, as well as of data evaluation and general theoretical analysis.

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