Diffusion and Subsurface Bonding of Hydrogen in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
A. E. Jaworowski ◽  
L. S. Wielunski
Keyword(s):  
Molecular Hydrogen ◽  
Depth Profiling ◽  
Surface Region ◽  
Hydrogen Trapping ◽  
Complex Motion ◽  
Near Surface ◽  
Temperature Range ◽  
Molecule Formation ◽  
Trapping Process

ABSTRACTThe hydrogen depth profiling in the near-surface region in silicon reveals the existence of a subsurface hydrogen layer. This layer acts as a barrier to diffusion. The observed subsurface hydrogen profile rises and then drops off sharply with increasing depth and is stable up to 770 K. Our annealing data indicate a rather complex motion of monatomic and molecular hydrogen in the near-surface region (<1500 A) in the temperature range 300 – 800 K. The subsurface molecule formation represents the dominant hydrogen trapping process in silicon.

The Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. E. Jaworowski ◽  
L. S. Wielunski ◽  
G. Bambakidis
Keyword(s):  
Thermal Stability ◽  
Barrier Layer ◽  
Molecular Hydrogen ◽  
Subsurface Layer ◽  
Surface Region ◽  
Surface Contamination ◽  
Near Surface ◽  
Surface Hydrogen

ABSTRACTThe near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon. By depositing an adlayer of Al on the surface we were able to observe the separation of the near-surface hydrogen profile in silicon from the surface contamination layer. The hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk. The observed subsurface layer is saturated with molecular hydrogen and its profile drops off sharply with increasing depth. The structure of this molecular hydrogen barrier and its thermal stability were studied.

Utilization of Charged Particle Backscattering to Study the Near Surface Region of Glasses. Application to Depth Profiling of Lanthanium, Cerium, Thorium and Uranium Induced by Aqueous Leaching.

1981 ◽  
Vol 11 ◽  
Author(s):  
Patrick Trocellier ◽  
Bernard Nens ◽  
Charles Engelmann
Keyword(s):  
Charged Particle ◽  
Depth Profiling ◽  
Surface Region ◽  
Rutherford Backscattering ◽  
Heavy Elements ◽  
Chemical Information ◽  
Concentration Profiles ◽  
Near Surface ◽  
Particle Backscattering

The Rutherford backscattering technique is useful for the determination of the concentration profiles of some heavy elements in the near surface region of glasses, but is not able to provide chemical information on the elements detected.

Temperature Dependence of Etch Rate and Residual Damage in Reactively Ion Etched GaAs and AlGaAs

1988 ◽  
Vol 129 ◽  
Author(s):  
S. J. Pearton ◽  
K. S. Jones ◽  
U. K. Chakabarti ◽  
B. Emerson ◽  
E. Lane ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Schottky Diodes ◽  
Surface Region ◽  
Ion Etching ◽  
Near Surface ◽  
Temperature Range ◽  
Residual Damage

ABSTRACTThe etch rate of GaAs and AIGaAs during CC12F2:O2 reactive ion etching was measured over the temperature range 50–400ºC. For GaAs, the etch rate increases super-linearly from ∼400Å.min−1 to ∼3000Åmin−1 over this temperature range for a 0.56 W.cm−2, 4 mTorr discharge with a 19:1 CC12F2:O2 mixture. The surface morphology of GaAs undergoes a smooth-to-rough transition near 150ºC, and theresidual damage in the near-surface region appears to decrease with increasing etch temperature. The I-V characteristics of Schottky diodes fabricated on the etched surfaces show ideality factors of 1.001 for 150ºC RIE, although these worsen because of thermal degradation of higher etching temperatures. From AES and XPS data the etched GaAs shows little contamination after etching. In contrast, little temperature dependence of the etch rate of AIGaAs is observed using CC12F2:O2, although once again there is surface degradation for etching temperatures above 150ºC.

The Surface Chemistry of Triallylamine on Si(111) and its Coadsorption with Triethylgallium

1995 ◽  
Vol 395 ◽  
Author(s):  
Dirk Freundt ◽  
Georg Landmesser ◽  
Angela Rizzi ◽  
Hans Lüth
Keyword(s):  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Surface Region ◽  
Si Substrate ◽  
Near Surface ◽  
Temperature Range ◽  
Resolution Electron ◽  
Partial Concentration ◽  
Electron Energy Loss

ABSTRACTThe surface chemistry of Triallylamine (TAA), (C3H5)3N on Si(111) has been studied by adsorption under UHV conditions and in-situ characterization. High Resolution Electron Energy Loss Spectroscopy (HREELS) yields the spectrum of vibration modes at the surface, and X-ray Photoelectron Spectroscopy (XPS) yields the chemical bonding and the partial concentration of the different adsorbates in the near surface region. The tertiary amine TAA physisorbs at RT without dissociation. Successive annealing steps of the physisorbed phase induce the dissociation of the amine at 400 °C. At higher temperatures the allyl groups are partially desorbed and the rest fully dissociated at 600 °C, where the hydrogen leaves the surface and the nitrogen and carbon start to diffuse into the Si substrate. A very similar behaviour is observed for the adsorption of TAA on a heated Si substrate. The coadsorption with Triethylgallium (TEG) in the temperature range 500–800 °C does not induce significant changes in the reaction at the Si surface. A negligible quantity of Ga is detected at the surface after codeposition in the whole investigated temperature range. The growth of a GaN phase has not been observed, neither on Si(111) nor on Al2O3(0001) substrates.

Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 173-179 ◽  
Author(s):  
Maxim B. Kelman ◽  
Paul C. McIntyre ◽  
Bryan C. Hendrix ◽  
Steven M. Bilodeau ◽  
Jeffrey F. Roeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Scattering Geometry ◽  
Pzt Films

Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

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