Depth profiling in the near surface region by low energy PIXE

ABSTRACTThe hydrogen depth profiling in the near-surface region in silicon reveals the existence of a subsurface hydrogen layer. This layer acts as a barrier to diffusion. The observed subsurface hydrogen profile rises and then drops off sharply with increasing depth and is stable up to 770 K. Our annealing data indicate a rather complex motion of monatomic and molecular hydrogen in the near-surface region (<1500 A) in the temperature range 300 – 800 K. The subsurface molecule formation represents the dominant hydrogen trapping process in silicon.

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The Effects of Low Energy Ion-Beam Milling on the Physical and Electrical Properties of N-GaAs.

MRS Proceedings ◽

10.1557/proc-396-807 ◽

1995 ◽

Vol 396 ◽

Author(s):

W.F. Seng ◽

P.A. Barnes ◽

M.L. Lovejoy ◽

L.P. Fu ◽

G.D. Gilliland ◽

...

Keyword(s):

Ion Beam ◽

Surface Region ◽

Low Energy ◽

Ion Milling ◽

Ion Beam Etching ◽

Near Surface ◽

Contact Metallization ◽

Current Voltage ◽

Capacitance Voltage ◽

Modification Of The Surface

AbstractLow energy neutral Ar ion-beam etching of n-GaAs was investigated as a possible “cleaning” procedure prior to contact metallization. The ion-beam source energy was varied between 35 eV and 1200 eV at a fixed current density of 1 mA/cm2. The effects of ion-milling on lightly doped n-GaAs were analyzed electrically by measuring current-voltage (IV) and capacitance-voltage (CV) characteristics of Schottky barriers formed after the ion-milling. The metal semiconductor barriers were prepared immediately following ion-milling without breaking vacuum. Photoluminescence and Rutherford Backscattering (RBS) were used to determine if any physical modification of the surface and near surface region of the ion-milled substrates had occurred.

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Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

E3S Web of Conferences ◽

10.1051/e3sconf/202126405037 ◽

2021 ◽

Vol 264 ◽

pp. 05037

Author(s):

Ilkhom Bekpulatov ◽

Ilkhom Turapov ◽

Sevara Abraeva ◽

Jakhongir Normuminov

Keyword(s):

Electron Diffraction ◽

Ion Implantation ◽

Electron Spectroscopy ◽

Surface Region ◽

Low Energy ◽

Subsequent Annealing ◽

Metal Silicide ◽

Slow Electron ◽

Near Surface ◽

Nanoscale Films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

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High resolution depth profiling in near-surface regions of solids by narrow nuclear reaction resonances below 0.5 MeV with low energy spread proton beams

Vacuum ◽

10.1016/0042-207x(93)90151-y ◽

1993 ◽

Vol 44 (3-4) ◽

pp. 185-190 ◽

Cited By ~ 12

Author(s):

WH Schulte ◽

H Ebbing ◽

HW Becker ◽

M Berheide ◽

M Buschmann ◽

...

Keyword(s):

High Resolution ◽

Nuclear Reaction ◽

Depth Profiling ◽

Low Energy ◽

Energy Spread ◽

Near Surface ◽

Proton Beams

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High resolution low energy resonance depth profiling of18O in near surface isotopic tracing studies

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(94)95837-8 ◽

1994 ◽

Vol 85 (1-4) ◽

pp. 326-330 ◽

Cited By ~ 12

Author(s):

G. Battistig ◽

G. Amsel ◽

I. Trimaille ◽

J.-J. Ganem ◽

S. Rigo ◽

...

Keyword(s):

High Resolution ◽

Depth Profiling ◽

Low Energy ◽

Near Surface ◽

Energy Resonance ◽

Isotopic Tracing

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Utilization of Charged Particle Backscattering to Study the Near Surface Region of Glasses. Application to Depth Profiling of Lanthanium, Cerium, Thorium and Uranium Induced by Aqueous Leaching.

MRS Proceedings ◽

10.1557/proc-11-193 ◽

1981 ◽

Vol 11 ◽

Cited By ~ 1

Author(s):

Patrick Trocellier ◽

Bernard Nens ◽

Charles Engelmann

Keyword(s):

Charged Particle ◽

Depth Profiling ◽

Surface Region ◽

Rutherford Backscattering ◽

Heavy Elements ◽

Chemical Information ◽

Concentration Profiles ◽

Near Surface ◽

Particle Backscattering

The Rutherford backscattering technique is useful for the determination of the concentration profiles of some heavy elements in the near surface region of glasses, but is not able to provide chemical information on the elements detected.

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Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

Journal of Materials Research ◽

10.1557/jmr.2003.0024 ◽

2003 ◽

Vol 18 (1) ◽

pp. 173-179 ◽

Cited By ~ 13

Author(s):

Maxim B. Kelman ◽

Paul C. McIntyre ◽

Bryan C. Hendrix ◽

Steven M. Bilodeau ◽

Jeffrey F. Roeder ◽

...

Keyword(s):

Thin Films ◽

Depth Profiling ◽

Chemical Vapor ◽

Surface Region ◽

Grazing Incidence ◽

X Ray Diffraction ◽

Near Surface ◽

X Ray ◽

Scattering Geometry ◽

Pzt Films

Structural properties of polycrystalline Pb(Zr0.35Ti0.65)O3 (PZT) thin films grown by metalorganic chemical vapor deposition on Ir bottom electrodes were investigated. Symmetric x-ray diffraction measurements showed that as-deposited 1500 íthick PZT films are partially tetragonal and partially rhombohedral. Cross-section scanning electron microscopy showed that these films have a polycrystalline columnar microstructure with grains extending through the thickness of the film. X-ray depth profiling using the grazing-incidence asymmetric Bragg scattering geometry suggests that each grain has a bilayer structure consisting of a near-surface region in the etragonal phase and the region at the bottom electrode interface in the rhombohedral hase. The required compatibility between the tetragonal and rhombohedral phases in he proposed layered structure of the 1500 Å PZT can explain the peak shifts observed n the symmetric x-ray diffraction results of thicker PZT films.

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