Through Silicon Via metallization: A novel approach for insulation/barrier/copper seed layer deposition based on wet electrografting and chemical grafting technologies

2008 ◽  
Author(s):  
Vincent Mevellec ◽  
Dominique Suhr ◽  
José Gonzalez ◽  
Isabelle Bispo ◽  
Frédéric Raynal ◽  
...  
Keyword(s):  
Seed Layer ◽  
Through Silicon Via ◽  
Novel Approach ◽  
Layer Deposition ◽  
Chemical Grafting ◽  
Copper Seed Layer

Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition

2014 ◽  
Vol 556 ◽  
pp. 434-439 ◽  
Author(s):  
Jae-Min Park ◽  
Kwangseon Jin ◽  
Byeol Han ◽  
Myung Jun Kim ◽  
Jongwan Jung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Nitride Film ◽  
Copper Nitride ◽  
Layer Deposition ◽  
Copper Seed Layer

A Novel Thin Wafer Handling Technology to Enable Cost-Effective Fabrication of Through-Glass Via Interposers

2014 ◽  
Vol 2014 (1) ◽  
pp. 000724-000728 ◽  
Author(s):  
Alvin Lee ◽  
Jay Su ◽  
Kim Arnold ◽  
Dongshun Bai ◽  
Bor Kai Wang ◽  
...  
Keyword(s):  
Line Width ◽  
Seed Layer ◽  
Cost Effective ◽  
Effective Solution ◽  
Manufacturing Costs ◽  
Process Flow ◽  
Isolation Layer ◽  
Bonding Material ◽  
Layer Deposition ◽  
Copper Seed Layer

Thin wafer handling technologies to fabricate silicon interposers have been widely discussed at conferences. Despite tremendous efforts to overcome several technical hurdles such as wafer chipping, cracking, and warpage, high manufacturing costs resulting from the complexity of the processes used to make silicon interposers remains a major concern. Fabricating a through-glass via (TGV) interposer using novel thin wafer handling (TWH) technology will be presented here as an example of a simple and cost-effective solution for realizing 2.5-D IC integration. Utilizing a simplified TWH technology, a TGV interposer with 30-μm-diameter vias to eliminate the isolation layer is combined with polymer-based polybenzoxazole (PBO) as passivation to build one to two redistribution layers (RDLs) with 20-μm line width on both sides after thinning to 100 μm. The simplified TWH requires only a release layer on the glass carrier and another layer of bonding material on the TGV wafer to enable fabrication of a TGV interposer. A process flow for fabricating a TGV interposer utilizing a simplified TWH technology will be presented in detail, including carrier treatment, bonding material, bonding, titanium/copper seed layer deposition, copper plating, RDL deposition, under-bump material (UBM) formation, debonding, and silicon chip stacking on a TGV interposer. The combination of TGV interposer and novel TWH technology will pave the way for cost-effective fabrication in 2.5-D IC.

Copper Seed Layer Deposition by a New Liquid Precursor

2011 ◽  
Vol 17 (1-3) ◽  
pp. 65-68 ◽  
Author(s):  
Sang-Woo Kang ◽  
Yong-Hyeon Shin ◽  
Jin-Tae Kim ◽  
Ju-Young Yun ◽  
Yun-Hee Chang ◽  
...  
Keyword(s):  
Seed Layer ◽  
Liquid Precursor ◽  
Layer Deposition ◽  
Copper Seed Layer

Effect of via profile on copper seed layer deposition for electroplating

2007 ◽  
Author(s):  
I. U. Abhulimen ◽  
T. Lam ◽  
A. Kamto ◽  
S. Burkett ◽  
L. Schaper ◽  
...  
Keyword(s):  
Seed Layer ◽  
Layer Deposition ◽  
Copper Seed Layer

Copper seed layer using atomic layer deposition for Cu interconnect

2010 ◽  
Author(s):  
Dae-Yong Moon ◽  
Tae-Suk Kwon ◽  
Byung-Woo Kang ◽  
Woong-Sun Kim ◽  
Baek Mann Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Interconnect ◽  
Copper Seed Layer

Electroless copper seed layer deposition on tantalum nitride barrier film

2005 ◽  
Vol 198 (1-3) ◽  
pp. 287-290 ◽  
Author(s):  
S.P. Chong ◽  
Y.C. Ee ◽  
Z. Chen ◽  
S.B. Law
Keyword(s):  
Seed Layer ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Electroless Copper ◽  
Copper Seed Layer ◽  
Barrier Film

Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 35 (2) ◽  
pp. 125-132 ◽  
Author(s):  
Jiajun Mao ◽  
Eric Eisenbraun ◽  
Vincent Omarjee ◽  
Andrey Korolev ◽  
Christian Dussarrat
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Copper Seed Layer
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