MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

MRS Proceedings ◽

10.1557/proc-116-199 ◽

1988 ◽

Vol 116 ◽

Cited By ~ 4

Author(s):

H. Noge ◽

H. Kano ◽

M. Hashimoto ◽

I. Igarashi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Hall Mobility ◽

Molecular Beam ◽

Gaas Layer ◽

Si Substrate ◽

Mbe Growth ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Antiphase Domains

AbstractGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950 °C over 60 min or at 1000 °C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2 /Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3 . Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, the warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (ρ ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2 . This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 µm-long gate reaches 88 mS/mm at 293 K.

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

MRS Proceedings ◽

10.1557/proc-126-153 ◽

1988 ◽

Vol 126 ◽

Author(s):

H. Noge ◽

H. Kano ◽

M. Hashimoto ◽

I. Igarashi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Hall Mobility ◽

Molecular Beam ◽

Gaas Layer ◽

Si Substrate ◽

Mbe Growth ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Antiphase Domains

ABSTRACTGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950°C over 60 min or at 1000°C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2/Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3. Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, thzxcSe warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (p ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2. This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 μm-long gate reaches 88 mS/mm at 293 K.

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C

Journal of Crystal Growth ◽

10.1016/0022-0248(87)90306-x ◽

1987 ◽

Vol 83 (3) ◽

pp. 431-436 ◽

Cited By ~ 21

Author(s):

H. Noge ◽

H. Kano ◽

T. Kato ◽

M. Hashimoto ◽

I. Igarashi

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Gaas Layer ◽

Si Substrate ◽

Molecular Beam Epitaxial ◽

Antiphase Domains ◽

Molecular Beam Epitaxial Growth

Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-220-217 ◽

1991 ◽

Vol 220 ◽

Cited By ~ 12

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Lower Limit ◽

Molecular Beam ◽

Growth Direction ◽

High Concentration ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Kinetics Of

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106234 ◽

1991 ◽

Vol 59 (14) ◽

pp. 1735-1736 ◽

Cited By ~ 22

Author(s):

K. Aketagawa ◽

T. Tatsumi ◽

J. Sakai

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98619 ◽

1987 ◽

Vol 51 (19) ◽

pp. 1512-1514 ◽

Cited By ~ 53

Author(s):

A. Okamoto ◽

K. Ohata

Keyword(s):

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

MBE Growth of Epitaxial Calcium Fluoride on Silicon

MRS Proceedings ◽

10.1557/proc-54-285 ◽

1985 ◽

Vol 54 ◽

Cited By ~ 4

Author(s):

L. J. Schowalter ◽

R. W. Fathauer

Keyword(s):

Epitaxial Growth ◽

Detrimental Effect ◽

Lattice Structure ◽

Substrate Surface ◽

Breakdown Field ◽

Si Substrate ◽

Semiconductor Interface ◽

Mbe Growth ◽

Si Substrates ◽

Breakdown Field Strength

ABSTRACTThe growth of an epitaxial insulator such as CaF2. on Si substrates and ita subsequent overgrowth with epitaxial sen iconduct ors have a number of important applications in the electronics industry. In addition, it presents a unique opportunity to study an insulator/semiconductor interface under controlled conditions. We have studied the growth of epitaxial CaF. on Si substrates and their subsequent overgrowth with Si or Ge under various conditions. While epitaxial growth of CaF2, (which has an fee lattice structure as does Si) can be obtained on (100), (110) and (111) oriented Si substrates, the best quality crystal growth and surface morphology is obtained on (111) substrates as the CaF. (111) surface has the lowest free energy. Atomic steps on the original Si substrate surface are shown to have a detrimental effect on the epitaxial growth of CaF2. I-V measurements on the epitaxial (111) films show that the intrinsic breakdown field strength exceeds 2 MV/cm, however, high-field induced ionization can cause thermal breakdown at lower voltages. C-V measurements typically show ∼1012 states/cm in the Si band gap as grown. However, it is possible to reduce this number to less than 10 by annealing procedures after growth.

MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

MRS Proceedings ◽

10.1557/proc-56-253 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 3

Author(s):

H. ZOGG ◽

P. MAIER ◽

P. NORTON

Keyword(s):

Molecular Beam Epitaxy ◽

Mechanical Stress ◽

Lattice Constant ◽

Molecular Beam ◽

Rutherford Backscattering ◽

Epitaxial Layers ◽

Mbe Growth ◽

Electron Channeling ◽

Si Substrates ◽

Lattice Matched

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.339 ◽

2013 ◽

Vol 740-742 ◽

pp. 339-343 ◽

Cited By ~ 7

Author(s):

Shota Sambonsuge ◽

Eiji Saito ◽

Myung Ho Jung ◽

Hirokazu Fukidome ◽

Sergey Filimonov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Lattice Mismatch ◽

Growth Conditions ◽

Si Substrate ◽

Si Substrates ◽

High Interest ◽

Gas Source ◽

Gas Pressures

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20 %) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-1178-aa01-12 ◽

2009 ◽

Vol 1178 ◽

Author(s):

Yi-Lu Chang ◽

Arya Fatehi ◽

Feng Li ◽

Zetian Mi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Room Temperature ◽

Molecular Beam ◽

Stacking Faults ◽

Seeding Layer ◽

Mbe Growth ◽

Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.