The effect of molybdenum trioxide inter-layer between indium tin oxide (ITO) and organic semiconductor on the energy level alignment

2009 ◽  
Vol 1212 ◽  
Author(s):  
Irfan Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Yang Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide ◽  
Ultra Violet ◽  
Photoemission Spectroscopy ◽  
Layer By Layer ◽  
Band Bending ◽  
Energy Level Alignment ◽  
In Series

AbstractWe investigated 0 to 300 Å thick stepped molybdenum trioxide (MoO3) inter-layer between in-situ oxygen plasma treated conducting indium tin oxide (ITO) and chloro-aluminum pthalocyanine (AlPc-Cl) layer-by-layer evaporated up to 228 Å, with ultra-violet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPES). The MoO3 inter-layers were observed to increase the surface workfunction. The workfunction increase was observed to saturate at 20 Å of MoO3 coverage. The increased surface workfunction causes hole accumulation and band bending in the subsequently deposited AlPc-Cl. A possible explanation of reduction in series resistance by the insertion of the MoO3 insulating layer is discussed based on these observations and energy level alignment.

Light-soaking issue in polymer solar cells: Photoinduced energy level alignment at the sol-gel processed metal oxide and indium tin oxide interface

2012 ◽  
Vol 111 (11) ◽  
pp. 114511 ◽  
Author(s):  
Junghwan Kim ◽  
Geunjin Kim ◽  
Youna Choi ◽  
Jongjin Lee ◽  
Sung Heum Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Level ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Polymer Solar Cells ◽  
Sol Gel ◽  
Oxide Interface ◽  
Energy Level Alignment

Energy level alignment and hole injection property of poly(9-vinylcarbazole)/indium tin oxide interface

2018 ◽  
Vol 706 ◽  
pp. 317-322 ◽  
Author(s):  
Junkyeong Jeong ◽  
Jiyeon Lee ◽  
Hyunchan Lee ◽  
Gyeongho Hyun ◽  
Soohyung Park ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hole Injection ◽  
Oxide Interface ◽  
Energy Level Alignment ◽  
Injection Property

Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

2010 ◽  
Vol 96 (7) ◽  
pp. 073304 ◽  
Author(s):  
Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Young Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Organic Semiconductor ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide

Energy Level Alignment at Bebq2/PEI/ITO Interfaces Studied by UV Photoemission Spectroscopy

MRS Advances ◽  
2017 ◽  
Vol 2 (42) ◽  
pp. 2261-2266
Author(s):  
Kohei Shimizu ◽  
Hirohiko Fukagawa ◽  
Katsuyuki Morii ◽  
Hiroumi Kinjo ◽  
Tomoya Sato ◽  
...  
Keyword(s):  
Energy Level ◽  
Work Function ◽  
Indium Tin Oxide ◽  
Electron Injection ◽  
Photoemission Spectroscopy ◽  
Level Shift ◽  
Kelvin Probe ◽  
Vacuum Level ◽  
Energy Level Alignment ◽  
Improvement Effect

ABSTRACTA polyethyleneimine (PEI) interlayer has been applied on indium tin oxide (ITO) to improve electron injection in organic devices including inverted organic light-emitting diodes (OLEDs). To understand the improvement effect by PEI insertion, the energy level alignment at bis(10-hydroxybenzo[h]quinolinato)beryllium (Bebq2)/PEI/ITO interfaces was investigated by UV photoemission spectroscopy (UPS). The deposition of a PEI layer was found to reduce the absolute work function of ITO by 1.4 eV. The vacuum level shifts at Bebq2/ITO and Bebq2/PEI interfaces were also determined as 0.3 eV and 0.1 eV in the direction to reduce the electron injection barrier, respectively. Thus the work function reduction by PEI and downward vacuum level shift at the Bebq2/PEI interface can contribute to the improvement effect. Kelvin probe measurement revealed the weak orientation polarization in Bebq2 film with the bottom side positively polarized. This polarization polarity is also advantageous for electron injection in inverted devices.

Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide

2012 ◽  
Vol 101 (23) ◽  
pp. 233305 ◽  
Author(s):  
Younjoo Lee ◽  
Hyunbok Lee ◽  
Soohyung Park ◽  
Yeonjin Yi
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Level Alignment

scholarly journals Energy level alignment of electrically doped hole transport layers with transparent and conductive indium tin oxide and polymer anodes

2007 ◽  
Vol 102 (7) ◽  
pp. 073719 ◽  
Author(s):  
Karsten Fehse ◽  
Selina Olthof ◽  
Karsten Walzer ◽  
Karl Leo ◽  
Robert L. Johnson ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hole Transport ◽  
Hole Transport Layers ◽  
Energy Level Alignment

Evidence of nitric-oxide-induced surface band bending of indium tin oxide

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong
Keyword(s):  
Nitric Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Band ◽  
Band Bending
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