Contact Pressure Distribution in the Chemical Mechanical Planarization of 450mm Wafers

2010 ◽  
Vol 1249 ◽  
Author(s):  
Padraig Timoney ◽  
Eamonn Ahearne ◽  
Gerald Byrne

AbstractOptimisation of spatial uniformity of material removal in chemical mechanical planarization requires an understanding of the mechanics of the wafer carrier system. Finite element analyses have been carried out by researchers identifying relationships between von Mises stress distribution and material removal rate. However, in many of these wafer scale models, the derivation of the material properties of the polishing pad and sub pad is unclear and consequently a large variation in values used is observed. Models are generally validated with a procedure different to that simulated in the model and with different output variables. Few models have incorporated the industry standard method of pressurizing the backside of the wafer independently to the wafer carrier loading using a pressurized air chamber located directly behind the backside of the wafer. The anticipated introduction of 450mm diameter wafers has surprisingly not been accompanied by wafer scale models investigating the issues that will arise from the diameter and thickness scaling ratio of the wafer.This paper presents a unique approach to finite element modeling of CMP incorporating realistic boundary conditions for the wafer carrier and platen assemblies. Model predictions of interfacial contact pressure for a 200mm wafer loaded by a lip seal type carrier head were validated by unique measurements of the contact pressure between the wafer and the pad using Fujifilm Prescale TM pressure measurement film and accompanying analysis software. The results demonstrated a close correlation between the model's prediction and the measured values. Results are presented for the upscaling of this validated model to 450mm wafer dimensions. The results indicate a doubling of the contact pressure maximum values compared to the 200mm wafer model. These results illustrate the extent of the challenge facing CMP tool vendors in increasing the level of control of the mechanical force distributed by the wafer carrier on 450mm wafers. The model can be used as a design tool to optimize machine and process parameters.

Author(s):  
Emmanuel A. Baisie ◽  
Z. C. Li ◽  
X. H. Zhang

Chemical mechanical planarization (CMP) is widely used to planarize and smooth the surface of semiconductor wafers. In CMP, diamond disc conditioning is traditionally employed to restore pad planarity and surface asperity. Pad deformation which occurs during conditioning affects the material removal mechanism of CMP since pad shape, stress and strain are related to cut rate during conditioning, pad wear rate and wafer material removal rate (MRR) during polishing. Available reports concerning the effect of diamond disc conditioning on pad deformation are based on simplified models of the pad and do not consider its microstructure. In this study, a two-dimensional (2-D) finite element analysis (FEA) model is proposed to analyze the interaction between the diamond disc conditioner and the polishing pad. To enhance modeling fidelity, image processing is utilized to characterize the morphological and mechanical properties of the pad. An FEA model of the characterized pad is developed and utilized to study the effects of process parameters (conditioning pressure and pad stiffness) on pad deformation. The study reveals that understanding the morphological and mechanical properties of CMP pads is important to the design of high performance pads.


1999 ◽  
Author(s):  
Fuqian Yang ◽  
J. C. M. Li ◽  
Imin Kao

Abstract The deformation of the wire in the wiresaw slicing process was studied by considering directly the mechanical interaction between the wire and the ingot. The wire tension on the upstream is larger than on the downstream due to the friction force between the wire and the ingot. The tension difference across the cutting zone increases with friction and the span of the contact zone. The pressure in the contact zone increases from the entrance to the exit if the wire bending stiffness is ignored. The finite element results show that the wire bending stiffness plays an important role in the wire deformation. Higher wire bending stiffness (larger wire size) generates higher force acting onto the ingot for the same amount of wire deformation, which will leads to higher material removal rate and kerf loss. While larger wire span will reduce the force acting onto the ingot for a given ingot displacement in the direction perpendicular to the wire.


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