Ion Beam Induced Intermixing of Wsi0.45 on GaAs

1988 ◽  
Vol 128 ◽  
Author(s):  
S. J. Pearton ◽  
K. T. Short ◽  
K. S. Jones ◽  
A. G. Baca ◽  
C. S. Wu
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Ion Beam ◽  
Dose Range ◽  
Device Fabrication ◽  
Electrical Activation ◽  
High Dose ◽  
Dislocation Loops ◽  
Semiconductor Interface ◽  
High Level

ABSTRACTThe systematics of ion beam induced intermixing of WSi0.45 on GaAs have been studied after through-implantation of Si or O in the dose range 1013 − 5 × 1016 cm−2. SIMS profiling shows significant knock-on of Si and W into the GaAs at the high dose range in accordance with Monte Carlo simulations, but there is virtually no electrical activation (≤0.1%) of this Si after normal implant annealing (900°C, 10 sec). This appears to be a result of the high level of disorder near the metal-semiconductor interface, which is not repaired by annealing. This damage consists primarily of dislocation loops extending a few hundred angstroms below the end of range of the implanted ions. Extrapolation of the ion doses used in this work to the usual doses used in GaAs device fabrication would imply that ion-induced intermixing of WSix will not be significant in through-implantation processes.

scholarly journals Evaluating Ciprofloxacin Dosing for Pseudomonas aeruginosa Infection by Using Clinical Outcome-Based Monte Carlo Simulations

2005 ◽  
Vol 49 (10) ◽  
pp. 4009-4014 ◽  
Author(s):  
Sheryl Zelenitsky ◽  
Robert Ariano ◽  
Godfrey Harding ◽  
Alan Forrest
Keyword(s):  
Pseudomonas Aeruginosa ◽  
Monte Carlo ◽  
Clinical Outcome ◽  
Monte Carlo Simulations ◽  
Standard Dose ◽  
High Dose ◽  
Target Attainment ◽  
Real Patient ◽  
Dosing Regimens ◽  
Cure Rates

ABSTRACT Pseudomonas aeruginosa causes serious infections whose outcome is highly dependent on antimicrobial therapy. The goal of this study was to predict the relative efficacies of three ciprofloxacin dosing regimens for P. aeruginosa infection using clinical outcome-based Monte Carlo simulations (MCS) with “real patient” demographics, pharmacokinetics, MICs, and pharmacodynamics (PDs). Each cohort consisted of 1,000 simulated study subjects. Three ciprofloxacin dosing regimens were studied, including (i) the recommended standard dose of 400 mg given intravenously (i.v.) every 12 h (q12h), (ii) the recommended high dose of 400 mg i.v. q8h, and (iii) a novel, PD-targeted regimen to attain a ƒAUC/MIC value of >86. Probability of target attainment (PTA) and probability of cure (POC) were determined for each regimen. POC with the standard dose was at least 0.90 if pathogen MICs were ≤0.25 μg/ml but only 0.59 or 0.27 if MICs were 0.5 or 1 μg/ml, respectively. Predicted cure rates in these MIC categories were significantly higher at 0.72 and 0.40 with the high dose and 0.91 and 0.72 with the PD-targeted regimen(P < 0.0001). Analyses based on the local susceptibility profile produced PTA and POC estimates of 0.44 and 0.74 with the standard ciprofloxacin dose, 0.58 and 0.81 with the high dose, and 0.84 and 0.93 with the PD-targeted regimen, respectively. In conclusion, as demonstrated by clinical outcome-based MCSs, the highest recommended ciprofloxacin dose of 400 mg i.v. q8h should be used in the treatment of P. aeruginosa infection to improve PD target attainment and clinical cure. However, even this appears ineffective if pathogen MICs are 1 μg/ml, warranting the consideration of a lower MIC breakpoint, ≤0.5 μg/ml.

Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si

2005 ◽  
Vol 108-109 ◽  
pp. 395-400 ◽  
Author(s):  
Filippo Giannazzo ◽  
E. Bruno ◽  
S. Mirabella ◽  
G. Impellizzeri ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Device Fabrication ◽  
Electrical Activation ◽  
High Dose ◽  
Dimensional Diffusion ◽  
Transmission Electron ◽  
Sio2 Mask ◽  
The Impact ◽  
Subsequent Thermal Annealing

In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.

scholarly journals Population Pharmacokinetics of Conventional and Intermittent Dosing of Liposomal Amphotericin B in Adults: a First Critical Step for Rational Design of Innovative Regimens

2012 ◽  
Vol 56 (10) ◽  
pp. 5303-5308 ◽  
Author(s):  
William W. Hope ◽  
Joanne Goodwin ◽  
Timothy W. Felton ◽  
Michael Ellis ◽  
David A. Stevens
Keyword(s):  
Monte Carlo ◽  
Optimal Design ◽  
Monte Carlo Simulations ◽  
Amphotericin B ◽  
Liposomal Amphotericin ◽  
Liposomal Amphotericin B ◽  
High Dose ◽  
Pharmacokinetic Data ◽  
Informative Sampling ◽  
Sampling Times

ABSTRACTThere is increased interest in intermittent regimen of liposomal amphotericin B, which may facilitate use in ambulatory settings. Little is known, however, about the most appropriate dosage and schedule of administration. Plasma pharmacokinetic data were acquired from 30 patients receiving liposomal amphotericin B for empirical treatment of suspected invasive fungal infection. Two cohorts were studied. The first cohort received 3 mg of liposomal amphotericin B/kg of body weight/day; the second cohort received 10 mg of liposomal amphotericin B/kg at time zero, followed by 5 mg/kg at 48 and 120 h. The levels of liposomal amphotericin B were measured by high-pressure liquid chromatography (HPLC). The pharmacokinetics were estimated by using a population methodology. Monte Carlo simulations were performed. D-optimal design was used to identify maximally informative sampling times for both conventional and intermittent regimens for future studies. A three-compartment pharmacokinetic model best described the data. The pharmacokinetics for both conventional and intermittent dosing were linear. The estimates for the mean (standard deviation) for clearance and the volume of the central compartment were 1.60 (0.85) liter/h and 20.61 (15.27) liters, respectively. Monte Carlo simulations demonstrated considerable variability in drug exposure. Bayesian estimates for clearance and volume increased in a linear manner with weight, but only the former was statistically significant (P= 0.039). D-optimal design provided maximally informative sampling times for future pharmacokinetic studies. The pharmacokinetics of a conventional and an intermittently administered high-dose regimen liposomal amphotericin B are linear. Further pharmacokinetic-pharmacodynamic preclinical and clinical studies are required to identify safe and effective intermittent regimens.

Radiation-Induced Nanostructures in an Iron Phosphate Glass

2003 ◽  
Vol 792 ◽  
Author(s):  
K. Sun ◽  
T. Ding ◽  
L.M. Wang ◽  
R.C. Ewing
Keyword(s):  
Phosphate Glass ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Dose Range ◽  
Iron Phosphate ◽  
High Energy ◽  
High Dose ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Feo Nanoparticles

ABSTRACTElectron and ion irradiation-induced nanostructures in an iron phosphate glass with a composition of 45 mol%Fe2O3-55 mol%P2O5 have been characterized by advanced electron microbeam techniques. Analysis by energy-filtered transmission electron microscopy indicated that Fe-rich and P-rich nanophases were formed when the glass was irradiated under a broad (with a diameter of 1.2μm) electron beam [give the dose range]. Phase separation developed with the increase in electron dose (from 1.0×1026e/m2 to 4.8×1026e/m2) as a result of the formation of an Fe-rich phase and pure P-phase. The formation of the Fe-rich and the P-phases are thought to be due to mainly ionization process. Under a low energy ion beam irradiation, Fe/FeO nanoparticles were formed, as confirmed by selected-area electron diffraction analysis. However, no nanoparticles were observed under a high-energy high-dose ion irradiation. The ion beam-irradiation results suggest that the formation of the Fe/FeO nanoparticles was due to preferential sputtering during ion irradiation and that the nanoparticles lie within the surface layers of the glass.

scholarly journals Nano-structuring, surface and bulk modification with a focused helium ion beam

2012 ◽  
Vol 3 ◽  
pp. 579-585 ◽  
Author(s):  
Daniel Fox ◽  
Yanhui Chen ◽  
Colm C Faulkner ◽  
Hongzhou Zhang
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
High Dose ◽  
Modification Process ◽  
Dose Irradiation ◽  
Probe Size ◽  
Helium Ion ◽  
High Incidence ◽  
High Level ◽  
Irradiation Process

We investigate the ability of a focused helium ion beam to selectively modify and mill materials. The sub nanometer probe size of the helium ion microscope used provides lateral control not previously available for helium ion irradiation experiments. At high incidence angles the helium ions were found to remove surface material from a silicon lamella leaving the subsurface structure intact for further analysis. Surface roughness and contaminants were both reduced by the irradiation process. Fabrication is also realized with a high level of patterning acuity. Implantation of helium beneath the surface of the sample is visualized in cross section allowing direct observation of the extended effects of high dose irradiation. The effect of the irradiation on the crystal structure of the material is presented. Applications of the sample modification process are presented and further prospects discussed.

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