Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface
Keyword(s):
Ion Beam
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ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces
2005 ◽
Vol 275
(1-2)
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pp. e799-e805
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2002 ◽
Vol 37
(1)
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pp. 77-82
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2000 ◽
Vol 66
(2-3)
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pp. 303-308
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2003 ◽
Vol 42
(Part 1, No. 3)
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pp. 1133-1138
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1999 ◽
Vol 206
(1-2)
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pp. 27-36
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Keyword(s):
Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth process
2002 ◽
Vol 25
(4)
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pp. 570-576
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