Atom- and Radical-Surface Sticking Coefficients Measured Using Resonance Enhanced Multiphoton Ionization (REMPI)
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ABSTRACTSticking coefficients γ of neutral transient species at ambient temperature were measured using in situ Resonance Enhanced Multiphoton Ionization (REMPI) of the transients in a Knudsen cell. γ for I and CF3I‡ on a stainless steel surface were 0.16 and >0.5, respectively, whereas γ for CF3 on the same surface was measured to <0.01; γof SiH2 on a growing carbon containing amorphous silicon surface was 0.11; this value increased to 0.15 for interaction of SiH2 with a “pure” growing silicon-hydrogen surface, and γ of SiH2‡ on both types of surfaces was found to be >0.5.
2008 ◽
Vol 495
(1-2)
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pp. 330-334
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2020 ◽
Vol 561
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pp. 870-880
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2018 ◽
Vol 456
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pp. 457-463
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1986 ◽
Vol 1
(1)
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pp. 1-10
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