Ion Beam Processing of GaAs at Elevated Temperatures
Keyword(s):
Ion Beam
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ABSTRACTElevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.
1999 ◽
Vol 46
(1)
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pp. 80-86
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2004 ◽
Vol 82
(1)
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pp. 22-26
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1992 ◽
Vol 67
(1-4)
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pp. 301-307
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2010 ◽
Vol 157
(2)
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pp. A130
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