Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

1992 ◽  
Vol 67 (1-4) ◽  
pp. 301-307 ◽  
Author(s):  
O.C. Hellman ◽  
N. Herbots ◽  
O. Vancauwenberghe
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Ion Energy ◽  
Kinetics Of

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (4) ◽  
pp. 247-252
Author(s):  
Narasimhan Srinivasan ◽  
Katrina Rook ◽  
Ivan Berry ◽  
Binyamin Rubin ◽  
Frank Cerio
Keyword(s):  
Beam Energy ◽  
Etch Rate ◽  
Incidence Angle ◽  
Ion Beam ◽  
Ion Energy ◽  
Beam Voltage ◽  
Ion Energies ◽  
Sidewall Angle ◽  
Etch Rates

ABSTRACTWe investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.

Ion Beam Processing of GaAs at Elevated Temperatures

1988 ◽  
Vol 144 ◽  
Author(s):  
J. S. Williams ◽  
R. G. Elliman ◽  
S. T. Johnson ◽  
D. K. Sengupta ◽  
J. M. Zemanski
Keyword(s):  
Elevated Temperature ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Defect Production ◽  
Ion Energy ◽  
Residual Damage ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

ABSTRACTElevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films

1996 ◽  
Vol 68 (9) ◽  
pp. 1214-1216 ◽  
Author(s):  
E. Grossman ◽  
G. D. Lempert ◽  
J. Kulik ◽  
D. Marton ◽  
J. W. Rabalais ◽  
...  
Keyword(s):  
Ion Beam ◽  
Carbon Films ◽  
Ion Energy

Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Yuan-Cheng DU ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Low Energy ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

1985 ◽  
Vol 51 ◽  
Author(s):  
N. Herbots ◽  
B.R. Appleton ◽  
S.J. Pennycook ◽  
T.S. Noggle ◽  
R.A. Zuhr
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Ion Channeling ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Highly Uniform ◽  
Beam Deposition

ABSTRACTIon beam deposition (IBD), the process whereby magnetically analyzed ions are directly deposited on single crystal substrates, has been studied for 74Ge and 30Si ions on Si(100) and Ge(100). The effects of sputtercleaning prior to deposition and substrate temperature during deposition were investigated. Three analytical techniques were systematically used to obtain information on the deposited films: (1) Rutherford backscattering combined with ion channeling, (2) cross-section TEM, and (3) Seeman-Bohlin X-ray diffraction. In the energy range explored (40–200 eV), the width of the interface between the IBD film and the substrate was found to be always less than 1 nm. Each IBD layer was highly uniform in thickness and composition for deposition temperatures from 300 K to 900 K. Without prior sputter-cleaning and annealing of the Si(100) and Ge(100) substrates, no epitaxy was observed. UHV conditions were found to be a requirement in order to grow crystalline Si films presenting bulk-like density. This was not the case for Ge films which showed bulk-like density for IBD at higher pressures. Results on the first Si/Ge superstructure grown by IBD are also shown.

Gas Phase Conditions for Obtaining Device Quality Amorphous Silicon at Low Temperature and High Deposition Rate

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jatindra Kumar Rath ◽  
Minne de Jong ◽  
Arjan Verkerk ◽  
Monica Brinza ◽  
Ruud E.I. Schropp
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Gas Phase ◽  
Deposition Rate ◽  
Energy Flux ◽  
High Hydrogen ◽  
Ion Energy ◽  
Hydrogen Dilution

AbstractThe aim of this paper is to find a parameter space for deposition of amorphous silicon films at low substrate temperature by VHF PECVD process for application in solar cell fabrication on cheap plastics. Our studies show that at lower substrate temperature, keeping the pressure constant, the ion energy flux reaching the growth surface decreases, which we partly attribute to increasing gas phase collisions arising from an increase in gas density. The role of hydrogen is two fold: (1) higher hydrogen dilution increases the ion energy and restores it to its required value at low temperatures; (2) a normal to dusty plasma transition occurs at lower hydrogen to silane flow ratio and this transition regime shifts to higher dilution ratios for lower substrate temperatures. Thus the role of high hydrogen dilution at low temperature is to avoid the dusty regime. Thus the role of high hydrogen dilution at low temperature is to avoid the dusty regime. The ion energy flux at low substrate temperature can also be restored to the value obtained at high substrate temperature, without increasing hydrogen dilution, by simply lowering the chamber pressure or increasing the delivered plasma power, though the IEDFs in these cases differ substantially from the IEDF at high temperature conditions. We propose that a low pressure or high power in combination with a modest hydrogen dilution (high enough to avoid dusty regime) will deliver silicon films at low temperature without sacrificing deposition rate.

Amorphous or nanocrystalline AlN thin films formed from AlN: H

1994 ◽  
Vol 9 (6) ◽  
pp. 1449-1455 ◽  
Author(s):  
Xiao-Dong Wang ◽  
K.W. Hipps ◽  
J.T. Dickinso ◽  
Ursula Mazur
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Atmospheric Gases ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Beam Sputtering ◽  
Diffraction Peaks ◽  
Uv Visible

This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

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