X-Ray Interference Measurements of Ultrathin Semiconductor Layers

1989 ◽  
Vol 145 ◽  
Author(s):  
C.R. Wie
Keyword(s):  
X Ray Diffraction ◽  
Nondestructive Technique ◽  
Interference Structure ◽  
Rocking Curve ◽  
X Ray ◽  
Double Heterojunction ◽  
Strained Quantum Well ◽  
Interference Measurements ◽  
Strained Layer Superlattices

AbstractWe present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

Hydrothermal Synthesis and Characterization of ThO2, UxTh1-xO2, and UOx

2013 ◽  
Vol 1576 ◽  
Author(s):  
Jacob Castilow ◽  
Timothy W Zens ◽  
J. Matthew Mann ◽  
Joseph W. Kolis ◽  
Colin D. McMillen ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Lower Bound ◽  
Growth Rates ◽  
Curve Analysis ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Average Growth ◽  
Rocking Curve ◽  
X Ray

ABSTRACTHydrothermal synthesis of ThO2, UxTh1-xO2, and UOx at temperatures between 670°C and 700°C has been demonstrated. Synthesis at these temperatures is 50-80°C below prior growth studies and represents a new lower bound of successful growth. ThO2 single crystals of dimensions 6.49mm x 4.89mm x 3.89 mm and weighing 0.633g have been synthesized at average growth rates near 0.125mm/week. Single crystal UxTh1-xO2 crystals with mole fractions up to x≈0.30 have also been grown. The largest alloyed crystal with mole fraction x≈0.23 has dimensions of 2.97mm x 3.23mm x ∼3mm and recorded average growth rates near 0.2mm/week. Four structures were solved from X-ray diffraction data and their crystallographic data reported here. Rocking curve analysis determined a dislocation density of 1.2×109 cm-2.

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

2009 ◽  
Vol 24 (2) ◽  
pp. 78-81 ◽  
Author(s):  
T. N. Blanton ◽  
C. L. Barnes ◽  
M. Holland ◽  
K. B. Kahen ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
High Resolution ◽  
Phase Identification ◽  
Pin Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sample Throughput ◽  
Gaas Substrates ◽  
Deposition Parameters

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pin-diode LED applications. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500 to 600 arc sec. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a four-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc sec are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction

2012 ◽  
Vol 620 ◽  
pp. 22-27 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Hassan Zainuriah ◽  
Yushamdan Yusof
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Structural Characterization ◽  
Light Emitting Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray ◽  
Multi Quantum Well

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63oand 72.98o, respectively. Rocking curveφ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC)ω-scan, screw and mix dislocation density is found as 2.85 × 109cm-2, while pure edge dislocation density is found as 2.23 × 1011cm-2.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Characterization of InxGa1−xAs/GaAs strained layer superlattices by ion backscattering-channeling and X-ray diffraction

1988 ◽  
Vol 107 (1) ◽  
pp. K19-K24 ◽  
Author(s):  
R. Flagmeyer ◽  
K. Lenkeit ◽  
T. Baumbach ◽  
Yu. O. Kanter ◽  
A. A. Fedorov
Keyword(s):  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Strained Layer Superlattices ◽  
Ion Backscattering

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Preparation and Characterization of Bi2VO5.5 Films by MOD Method

1998 ◽  
Vol 541 ◽  
Author(s):  
E Tokumitsu ◽  
Y. Takahashi ◽  
H. Ishiwara
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Annealing Temperature ◽  
Field Effect Transistors ◽  
Relative Dielectric Constant ◽  
Full Width ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

AbstractWe report the preparation and characterization of Bi2VO5.5(BVO) films grown on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates by the MOD technique. Since a dielectric constant of BVO is much lower than that of PZT or SBT, BVO is one of the promising candidates for metal-ferroelectric-semiconductor field-effect transistors (MFSFETs). It is found by X-ray diffraction (XRD) measurements that highly (001)-oriented BVO films were obtained and that the crystalline quality was improved with increasing the annealing temperature. The full width at half maximum (FWHM) in the X-ray rocking curve measurements for BVO films on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates are 0.60, 1.00, and 5.10, respectively. Electrical properties were measured with Pt top electrodes and the typical relative dielectric constant determined by the C-V characteristics is 60-80.

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