Preparation and Characterization of Bi2VO5.5 Films by MOD Method

1998 ◽  
Vol 541 ◽  
Author(s):  
E Tokumitsu ◽  
Y. Takahashi ◽  
H. Ishiwara
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Annealing Temperature ◽  
Field Effect Transistors ◽  
Relative Dielectric Constant ◽  
Full Width ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

AbstractWe report the preparation and characterization of Bi2VO5.5(BVO) films grown on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates by the MOD technique. Since a dielectric constant of BVO is much lower than that of PZT or SBT, BVO is one of the promising candidates for metal-ferroelectric-semiconductor field-effect transistors (MFSFETs). It is found by X-ray diffraction (XRD) measurements that highly (001)-oriented BVO films were obtained and that the crystalline quality was improved with increasing the annealing temperature. The full width at half maximum (FWHM) in the X-ray rocking curve measurements for BVO films on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates are 0.60, 1.00, and 5.10, respectively. Electrical properties were measured with Pt top electrodes and the typical relative dielectric constant determined by the C-V characteristics is 60-80.

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

scholarly journals Isolation and Characterization of the Unexpected 1-N-Octyloxyperopyrene: A Solution-Processable P-Type Organic Semi-Conductor

2019 ◽  
Author(s):  
Marta Martínez-Abadía ◽  
Gabriella Antonicelli ◽  
Akinori Saeki ◽  
Manuel Melle-Franco ◽  
Aurelio Mateo-Alonso
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isolation And Characterization ◽  
Polycyclic Aromatic ◽  
P Type ◽  
Liquid Deposition

<div><div><div><p>The synthesis and optical, electrochemical, thermal and electrical characterization of a new and unexpected 1-n-octyloxyperopyrene is reported. The structure of 1-n- octyloxyperopyrene has been unambiguously established by single crystal X-ray diffraction. The solubility of this polycyclic aromatic hydrocarbon, endowed by the alkoxy substituent, allows the fabrication of thin film field-effect transistors by liquid deposition methods. These devices show hole mobilities up to 1.61 × 10–3 cm2 V–1 s–1.</p></div></div></div>

Synthesis and characterization of MnO2nanowires

2017 ◽  
Vol 31 (02) ◽  
pp. 1750006 ◽  
Author(s):  
Mohammad Hossein Ghorbani ◽  
Abdol Mahmood Davarpanah
Keyword(s):  
Lithium Batteries ◽  
Manganese Oxides ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Xrd Method

Manganese oxides are of more interest to researchers because of their ability as catalysts and lithium batteries. In this research, MnO2nanowires with diameter about 45 nm were synthesized by sol–gel method at room temperature (RT). Effect of increasing the annealing temperature from 400[Formula: see text]C to 600[Formula: see text]C on crystalline structure of nanostructure were studied and average crystallite size was estimated about 22 nm. X-ray Diffraction (XRD) method, Energy-Dispersive X-ray Diffraction (EDXD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM) were used to characterize the nanowires of MnO2.

scholarly journals Preparation and characterization of polyani-line/polyvinyl alcohol nanocomposite by laser irradiation

2017 ◽  
Vol 6 (4) ◽  
pp. 77
Author(s):  
N A M Shahin ◽  
S Abd El Mongy ◽  
R Kamal ◽  
A B El- Bially ◽  
A A Shabaka ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Relaxation Time ◽  
Polyvinyl Alcohol ◽  
Laser Irradiation ◽  
Imaginary Part ◽  
Electronic Transition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Amorphous Nature

Polyaniline (PANI) - Polyvinyl alcohol (PVA) nanocomposite were prepared using laser irradiation method. X-ray diffraction results showed that, (PANI/PVA) nanocomposite exhibited amorphous nature of polymer. The electronic transition will be studied using Ultraviolet-Visible spectrometer (UV-Vis). The real part of dielectric constant (έ) and imaginary part (ε") were studied. Also, the relaxation time was calculated.

Preparation and Characterization of Ce-Doped Ba0.2Sr0.8TiO3 Ferroelectric Ceramics

2010 ◽  
Vol 97-101 ◽  
pp. 1091-1096
Author(s):  
Dong Fang Han ◽  
Qun Tang ◽  
Qing Meng Zhang ◽  
Lei Wang ◽  
Ju Du
Keyword(s):  
Dielectric Constant ◽  
Xrd Analysis ◽  
Ferroelectric Ceramics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Property ◽  
Dielectric Constant And Loss ◽  
Ce Content ◽  
Doping Ratio

The structure and property of Ce-doped Ba0.2Sr0.8TiO3 (BST) were investigated as a function of Ce content. The density experiment results confirmed that increasing the Ce doping ratio caused the decrease in shrinkage factor of BST in the sintering procedure. Additionally, both Scanning Electron Microscope (SEM) and X-ray diffraction (XRD) analysis showed that the grain size of Ce-doped BST was dependent on the Ce content. Further more, the dielectric constant and dielectric loss had a curve relationship with increasing Ce content. The improvement of the electrical properties of Ce doping BST may be related to the decrease in the concentration of oxygen vacancies. According to the research, the diameter of grain, the dielectric constant and loss factor of the 1mol% Ce-doped Ba0.2Sr0.8TiO3 were 500nm, 365.8 and 0.0063, respectively.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

X-Ray Interference Measurements of Ultrathin Semiconductor Layers

1989 ◽  
Vol 145 ◽  
Author(s):  
C.R. Wie
Keyword(s):  
X Ray Diffraction ◽  
Nondestructive Technique ◽  
Interference Structure ◽  
Rocking Curve ◽  
X Ray ◽  
Double Heterojunction ◽  
Strained Quantum Well ◽  
Interference Measurements ◽  
Strained Layer Superlattices

AbstractWe present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

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