Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates
Keyword(s):
X Ray
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ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.
2007 ◽
Vol 25
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pp. 1128-1132
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2012 ◽
Vol 174-177
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pp. 508-511
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Vol 14
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pp. 1782-1790
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2008 ◽
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