Rheed Observation of Lattice Relaxation During Ge/Si(O01) Heteroepitaxy
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ABSTRACTWe report the dynamic RHEED (reflection high energy electron diffraction) observation during Ge/Si(001) heteroepitaxy at various growth temperatures. The RHEED intensityanalysis and the in-plane lattice constant analysis reveal a growth fashion and lattice relaxation. Both of them depend strongly on growth temperature.
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2005 ◽
Vol 38
(23)
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pp. 4222-4226
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1990 ◽
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pp. 396-397
1998 ◽
Vol 37
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pp. L164-L166
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Vol 15
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pp. 911-914
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