Exafs Study of the Stability of Amorphous TbFe Thin Films

1989 ◽  
Vol 151 ◽  
Author(s):  
Mahesh G. Samant ◽  
Ernesto E. Marinero ◽  
Clifford Robinson ◽  
G. S. Cargill
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Anisotropy ◽  
Thermal Annealing ◽  
Atomic Structure ◽  
Magnetic Relaxation ◽  
Amorphous Structure ◽  
Local Atomic Structure ◽  
Exafs Study ◽  
The Stability

ABSTRACTEXAFS is used to measure the local atomic structure of Fe in Au doped Tb-Fe thin film alloys. The as deposited sample shows structural fcatures which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Evolution with thermal annealing of magnetic anisotropy in FeCoB thin film interfaced with Mo layers

2018 ◽  
Vol 448 ◽  
pp. 100-106 ◽  
Author(s):  
Jagrati Dwivedi ◽  
Mukul Gupta ◽  
VR Reddy ◽  
Ashutosh Mishra ◽  
V Srihari ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Anisotropy ◽  
Thermal Annealing

Stability of As and B doped Si with respect to overlaying CoSi2 and TiSi2 thin films

1989 ◽  
Vol 4 (5) ◽  
pp. 1209-1217 ◽  
Author(s):  
K. Maex ◽  
G. Ghosh ◽  
L. Delaey ◽  
V. Probst ◽  
P. Lippens ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Diagrams ◽  
Thermodynamic Data ◽  
Ternary Phase ◽  
Experimental Results ◽  
Silicide Formation ◽  
Isothermal Sections ◽  
Ternary Phase Diagrams ◽  
The Stability

The thermodynamic equilibrium of structures consisting of a thin film silicide (TiSi2 or CoSi2) on doped Si (with As or B) is investigated. Isothermal sections of the ternary phase diagrams for Ti–Si–B, Co–Si–B, Ti–Si–As, and Co–Si–As have been evaluated, indicating the stability of high B concentrations in Si underneath a CoSi2 layer, the instability of high As concentrations in Si underneath a CoSi2 layer, and of B and As concentrations underneath a TiSi2 layer. The obtained thermodynamic predictions agree very well with experimental results (i) on the redistribution of dopants during silicide formation, (ii) on the diffusion of dopants from an ion implanted silicide, and (iii) on the stability of highly doped regions underneath the silicide, both for the case of TiSi2 and CoSi2. It is shown that even though the inaccuracy of reported thermodynamic data is substantial, thermodynamic calculations provide a useful guidance and are consistent with the experimental results.

A subnanometric resolution method for studying local atomic structure of interface and surface of multilayered nanoheterostructure thin films

2018 ◽  
Vol 656 ◽  
pp. 44-52
Author(s):  
Yu.A. Babanov ◽  
V.V. Vasin ◽  
D.A. Ponomarev ◽  
D.I. Devyaterikov ◽  
L.N. Romashev ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Local Atomic Structure ◽  
Resolution Method

Mechanistic insights on the electronic properties and electronic/atomic structure aspects in orthorhombic SrVO3 thin films: XANES–EXAFS study

2017 ◽  
Vol 19 (9) ◽  
pp. 6397-6405 ◽  
Author(s):  
Aditya Sharma ◽  
Mayora Varshney ◽  
Weon Cheol Lim ◽  
Hyun-Joon Shin ◽  
Jitendra Pal Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Atomic Structure ◽  
Exafs Study

Distortion in the V–O6 octahedra is observed in SrVO3 thin films and leads to larder separation between bonding and anti-bonding d‖ orbitals.

EXAFS study of the local atomic structure in amorphous InP

1987 ◽  
Vol 97-98 ◽  
pp. 435-438 ◽  
Author(s):  
A.M. Flank ◽  
P. Lagarde ◽  
D. Udron ◽  
S. Fisson ◽  
A. Gheorghiu ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Local Atomic Structure ◽  
Exafs Study

scholarly journals Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 130 ◽  
Author(s):  
Jin Chen ◽  
Fengchao Wang ◽  
Bobo Yang ◽  
Xiaogai Peng ◽  
Qinmiao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Band Gap Energy ◽  
Czts Thin Film ◽  
Gap Energy ◽  
Thermal Solution ◽  
Absorbing Layer

In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 °C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.

Sign in / Sign up

Export Citation Format

Share Document