Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications

ABSTRACTEXAFS is used to measure the local atomic structure of Fe in Au doped Tb-Fe thin film alloys. The as deposited sample shows structural fcatures which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure.

Download Full-text

Tailoring magnetic anisotropy in Tb–Fe–Co thin films by rapid thermal annealing

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2015.12.127 ◽

2016 ◽

Vol 663 ◽

pp. 430-435 ◽

Cited By ~ 24

Author(s):

K. Umadevi ◽

Sandip Bysakh ◽

J. Arout Chelvane ◽

S.V. Kamat ◽

V. Jayalakshmi

Keyword(s):

Thin Films ◽

Magnetic Anisotropy ◽

Thermal Annealing ◽

Rapid Thermal Annealing

Download Full-text

On the origin of magnetic anisotropy of FeCo(Nb)B alloy thin films: A thermal annealing study

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2019.02.079 ◽

2019 ◽

Vol 480 ◽

pp. 64-72 ◽

Cited By ~ 1

Author(s):

Pooja Gupta ◽

K.J. Akhila ◽

V. Srihari ◽

Peter Svec ◽

S.R. Kane ◽

...

Keyword(s):

Thin Films ◽

Magnetic Anisotropy ◽

Thermal Annealing ◽

Annealing Study

Download Full-text

Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO2 and Sic-SiO2 Interfaces

MRS Proceedings ◽

10.1557/proc-536-111 ◽

1998 ◽

Vol 536 ◽

Author(s):

Gerald Lucovsky ◽

David Wolfe ◽

Bruce Hinds

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Structural Relaxation ◽

Silicon Nanocrystals ◽

Model Systems ◽

Amorphous Thin Films ◽

Device Applications ◽

Hydrogenated Amorphous ◽

Silicon Oxygen

AbstractThis paper discusses the formation of silicon nanocrystals, nc-Si, by thermal annealing of hydrogenated amorphous thin films of SiOx, x<2 and (Si, C)Ox, x<2. Comparisons are made with SiCx films, providing additional insights into pathways for generation of nc-Si. These alloys are used as model systems for understanding chemical and structural relaxations occurring at Si-SiO2 and SiC-SiO2 interfaces during post-oxidation thermal annealing. This then provides important information for optimized processing of Si-SiO2 and SiC-SiO2 interfaces for device applications.

Download Full-text

Magnetotransport Properties in Semimetallic Bismuth Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.449-452.1061 ◽

2004 ◽

Vol 449-452 ◽

pp. 1061-1064 ◽

Cited By ~ 2

Author(s):

K.I. Lee ◽

M.H. Jeun ◽

J.M. Lee ◽

J.Y. Chang ◽

S.H. Han ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Room Temperature ◽

The Other ◽

Trigonal Axis ◽

Spintronic Device ◽

Sputtered Films ◽

Other Hand ◽

Device Applications

The magnetotransport properties of the electroplated and sputtered Bi thin films have been investigated in the range 4 300 K. A marked increase from 5,200 % to 80,000 % in the ordinary magnetoresistance (MR) for the electroplated Bi thin film was observed after thermal anneal at 4 K. The MR ratios for the as-grown and the annealed Bi thin films were found to exhibit 560 % and 590 %, respectively, at 300 K. On the other hand, the MR for the sputtered Bi film grown by sputtering was hardly observed at 4 and 300 K, whereas the MR ratios after anneal were found to reach 30,000 % at 4 K and 600 % at 300 K. We find that the room temperature MR in the sputtered films depends on the trigonal-axis oriented microstructures and grain size, in contrast to the electroplated films. Our results demonstrate the very large room temperature MR in the electroplated and sputtered Bi thin films, which can be used for spintronic device applications.

Download Full-text

Defects in β-SiC thin films grown on α-SiC substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010490x ◽

1988 ◽

Vol 46 ◽

pp. 568-569

Author(s):

Karren L. More

Keyword(s):

Thin Films ◽

Semiconductor Device ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Substrate Material ◽

Growth Interface ◽

Si Substrates ◽

Thermal Expansion Coefficients ◽

Device Applications ◽

Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Download Full-text