On the Structure of Carbon Films Deposited on Si(111) by Mass-Selected Low Energy C+ Beams
Keyword(s):
Ion Beam
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ABSTRACTOur recent report of epitaxial single crystal growth of C+ ion-beam-deposited diamond films on (111) single crystals of silicon is shown to be incorrect. We briefly describe the circumstances leading to this revision (and to our earlier finding) and discuss the possible structure of these films based on preliminary synchrotron X-ray data and on the Raman spectrum.
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2008 ◽
Vol 01
(02)
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pp. 127-132
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