An Arxps Investigation of the Initial Growth of Aluminum Films on the (0001) Face of Sapphire.

1989 ◽  
Vol 153 ◽  
Author(s):  
Mehran Arbab ◽  
Gary S. Chottiner ◽  
R. W. Hoffman
Keyword(s):  
Photoelectron Spectroscopy ◽  
Bulk Composition ◽  
Layer By Layer ◽  
Initial Growth ◽  
Aluminum Films ◽  
Vacuum Interface ◽  
Layer Adsorption ◽  
Thin Aluminum ◽  
Low Energy Electron

AbstractThe (0001) face of α-Al2O3 and the initial growth of ultra-thin aluminum, films deposited on this surface were studied by a combination of low energy electron diffraction, angle resolved x-ray photoelectron spectroscopy and thermal desorption techniques. At high temperatures, the (0001) face of α-Al2O3 reconstructs to form a (√31×√31)R±9° structure which remains stable at lower temperatures, as evidenced by IEED. ARXPS shows that the annealed sanple retains its bulk composition up to the solid-vacuum interface.Thin Al films were deposited on the above surface by in situ evaporation. ARXPS results indicate a uniform growth of the initial monolayer of aluminum. Further growth (<3 A°) deviated fr the layer by layer adsorption mechanism.

Investigations on the Aluminum/Para-Hexaphenyl Interface in Light Emitting Devices

1997 ◽  
Vol 488 ◽  
Author(s):  
N. Koch ◽  
L.-M. Yu ◽  
J.-L. Guyaux ◽  
Y. Morciaux ◽  
G. Leising ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Active Material ◽  
Direct Interaction ◽  
Metal Electrode ◽  
Insulating Layer ◽  
Aluminum Films ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thin Aluminum

AbstractBlue light emitting devices (LED) with para-hexaphenyl (PHP) as the active material and aluminum as cathode exhibit very high quantum efficiencies. To further optimize device performance it is crucial to understand the physical properties of the involved interfaces. We have performed Rutherford-Backscattering experiments on actual devices to show the importance of oxygen in the interface formation at the cathode as this leads to the formation of a layer of AlxOy between PHP and aluminum. In devices, where the organic film is exposed to air before the metal electrode is evaporated, an insulating layer on the metal-side therefore is inherent. It has been shown that the introduction of an intermediate layer between active material and electrodes results in a higher quantum efficiency of the LED, the most common concepts being charge-transport-layers, or insulators on the other hand. Our results underline the need for a better control of the LED processing. Ultraviolet- and X-ray photoelectron spectroscopy in situ growth studies of thin aluminum films on PHP have been made to reveal the change in the electronic structure of the active medium in a LED in the absence of oxygen. Also the direct interaction of oxygen with this organic material is investigated by photoelectron spectroscopy.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

scholarly journals in Situ X-ray Photoelectron Spectroscopic and Electrochemical Studies of the Bromide Anions Dissolved in 1-Ethyl-3-Methyl Imidazolium Tetrafluoroborate

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 304 ◽  
Author(s):  
Jaanus Kruusma ◽  
Arvo Tõnisoo ◽  
Rainer Pärna ◽  
Ergo Nõmmiste ◽  
Enn Lust
Keyword(s):  
Photoelectron Spectroscopy ◽  
Mesoporous Carbon ◽  
Residual Water ◽  
Carbon Electrode ◽  
Xps Spectra ◽  
X Ray ◽  
In Situ Xps ◽  
Vacuum Interface ◽  
Photoelectron Peak

Influence of electrode potential on the electrochemical behavior of a 1-ethyl-3-methylimidazolium tetrafluoroborate (EMImBF4) solution containing 5 wt % 1-ethyl-3-methylimidazolium bromide (EMImBr) has been investigated using electrochemical and synchrotron-initiated high-resolution in situ X-ray photoelectron spectroscopy (XPS) methods. Observation of the Br 3d5/2 in situ XPS signal, collected in a 5 wt % EMImBr solution at an EMImBF4–vacuum interface, enabled the detection of the start of the electrooxidation process of the Br- anion to Br3- anion and thereafter to the Br2 at the micro-mesoporous carbon electrode, polarized continuously at the high fixed positive potentials. A new photoelectron peak, corresponding to B–O bond formation in the B 1s in situ XPS spectra at E ≤ –1.17 V, parallel to the start of the electroreduction of the residual water at the micro-mesoporous carbon electrode, was observed and is discussed. The electroreduction of the residual water caused a reduction in the absolute value of binding energy vs. potential plot slope twice to ca. dBE dE-1 = –0.5 eV V-1 at E ≤ –1.17 V for C 1s, N 1s, B 1s, F 1s, and Br 3d5/2 photoelectrons.

Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

2006 ◽  
Vol 527-529 ◽  
pp. 1075-1078 ◽  
Author(s):  
Carey M. Tanner ◽  
Jun Lu ◽  
Hans Olof Blom ◽  
Jane P. Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect Transistors ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Ex Situ ◽  
Morphological Properties ◽  
Layer By Layer ◽  
Island Growth ◽  
X Ray

The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power metal-oxide-semiconductor field effect transistors. Stoichiometric HfO2 films were deposited on n-type 4H-SiC (0001) by atomic layer deposition (ALD) at substrate temperatures of 250-450°C. No significant interfacial layer formation was observed by in-situ X-ray photoelectron spectroscopy (XPS) and an abrupt interface was confirmed by high-resolution transmission electron microscopy (HRTEM). A temperature-dependent transition from amorphous layer-by-layer growth to crystalline three-dimensional island growth was identified by in-situ reflection high-energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). X-ray diffraction (XRD) confirmed the presence of monoclinic HfO2 domains in crystallized films.

Initial Growth of Co on Cu{001} Studied with LEED I(V)

2003 ◽  
Vol 10 (04) ◽  
pp. 641-648 ◽  
Author(s):  
J. Sainio ◽  
E. Alshamaileh ◽  
J. Lahtinen ◽  
C. J. Barnes
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Initial Growth ◽  
Matrix Approximation ◽  
Low Energy Electron Diffraction ◽  
Disordered Alloys ◽  
Random Alloy ◽  
Low Energy Electron ◽  
Temperature Programmed ◽  
Model Structures

The initial growth of Co deposited at room temperature on Cu{001} was studied with low energy electron diffraction (LEED) and temperature-programmed desorption (TPD). Measured I(V) spectra were compared with calculated spectra from several model structures, including substitutionally disordered alloys. The averaged T-matrix approximation (ATA) was used to model the random alloy layers. According to the I(V) analysis, alloying occurs in the first stages of the growth. TPD of CO indicates that both large areas of Co and areas of a surface alloy are already present at the lowest coverage. Both methods show that a transition to layer-by-layer growth occurs as the coverage increases.

Preparation of Poly(diallydimethyl ammonium chloride) (PDDA)/Au Nanocomposite Film by In Situ Electrochemical Reduction and its Electrocatalytic Properties

2010 ◽  
Vol 123-125 ◽  
pp. 189-192
Author(s):  
Hong Wei Shi ◽  
Li Zhang ◽  
Cong Wang ◽  
Ke Ying Zhang
Keyword(s):  
Electrochemical Reduction ◽  
Ammonium Chloride ◽  
Photoelectron Spectroscopy ◽  
Self Assembly ◽  
Composite Films ◽  
Nanocomposite Films ◽  
Layer By Layer ◽  
X Ray ◽  
Assembly Technique

Nanocomposite films containing Au nanoparticles were fabricated by alternating adsorption of poly(diallydimethyl ammonium chloride) (PDDA) and HAuCl4 using layer-by-layer self-assembly technique and subsequent in situ electrochemical reduction of the AuCl4- ions. The composition and properties of the composite films were characterized by ultraviolet-visible spectroscopy (UV-vis), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV).The UV-vis characteristic absorbances of PDDA and Au increase almost linearly with the number of bilayers, which suggests a progressive deposition with almost an equal amount of the PDDA and Au in each cycle. X-ray photoelectron spectroscopy further confirms the presence of the main components (such as PDDA and Au) of the nanocomposite films. Furthermore, the nanocomposite films also exhibit good electrocatalytic activity for the oxidation of ascorbic acid (AA), which may be used in electrochemical biosensors.

Inherent Buffer-layer Formation on Chalcopyrite Absorbers

2009 ◽  
Vol 1210 ◽  
Author(s):  
Christian Pettenkofer ◽  
Andreas Hofmann ◽  
Carsten Lehmann ◽  
Alexandra Dombrowa
Keyword(s):  
Buffer Layer ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Initial Growth ◽  
Layer Formation ◽  
Low Energy Electron Diffraction ◽  
Photovoltaic Applications ◽  
Step Growth ◽  
Low Energy Electron ◽  
Excess Sulfur

AbstractWe report on epitaxial growth of ZnO on polycrystalline and (112) orientated CuInS2 and CuInSe2 thin films. Step-by-step growth and investigation by photoelectron spectroscopy (PES) and low energy electron diffraction (LEED) provided information on the growth mode and the electronic structure of the ZnO-CuInS2-interface. During the initial growth no ZnO is deposited. Instead a monolayer of ZnS is formed by depletion the CuInS2 surface of excess sulfur. Thereafter, the ZnO growth starts on the ZnS buffer layer. The band alignment derived from PES shows that the ZnS buffer layer is thin enough to provide a beneficial band alignment for photovoltaic applications. CuInSe2 (112) samples showed a similar behaviour, but at the chosen deposition temperature of 450°C only ZnSe growth is detected. At lower temperatures ZnO growth on top of ZnSe is observed. XPEEM experiments show an inhomogeneous interface.

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