scholarly journals FEATURES OF GALLIUM ARSENIDE SURFACE RELIEF EVOLUTION DURING ANNEALING (MONTE CARLO SIMULATION)

2021 ◽  
Author(s):  
Nataliya Shwartz ◽  
Anna Spirina
Keyword(s):  
Monte Carlo Simulation ◽  
Gallium Arsenide ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Relief ◽  
Surface Defects ◽  
High Temperature Annealing ◽  
Morphological Transformations

In this work, simulation of high-temperature annealing of GaAs (111) substrates has been carried out. The dependences of the substrate morphological transformations on the temperature and the presence of surface defects are analyzed.

Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

2018 ◽  
Vol 386 ◽  
pp. 27-32 ◽  
Author(s):  
Anna A. Spirina ◽  
Igor Neizvestny ◽  
Nataliya L. Shwartz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Surface Morphology ◽  
Indium Arsenide ◽  
Transformation Kinetic ◽  
High Temperature Annealing ◽  
Vicinal Surface ◽  
Evaporation Temperature ◽  
Terrace Width

The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.

Si (001) surface defects after extended high temperature annealing

2000 ◽  
Vol 71 (1-3) ◽  
pp. 276-281 ◽  
Author(s):  
D Barge ◽  
J.P Joly ◽  
G Rolland ◽  
B Pichaud
Keyword(s):  
High Temperature ◽  
Surface Defects ◽  
High Temperature Annealing

A Monte Carlo Simulation of the High-Temperature Phases of Poly(p-hydroxybenzoic acid)

1995 ◽  
Vol 28 (21) ◽  
pp. 7075-7084 ◽  
Author(s):  
Stephen H. Foulger ◽  
Gregory C. Rutledge
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Hydroxybenzoic Acid

Charge States of Heavy Ions with Energy in the MeV Range in Crystalline Semiconductor Targets

1989 ◽  
Vol 157 ◽  
Author(s):  
A.M. Mazzone
Keyword(s):  
Monte Carlo Simulation ◽  
Gallium Arsenide ◽  
Monte Carlo ◽  
Heavy Ions ◽  
Random Orientation ◽  
Crystalline Semiconductor ◽  
Charge States

ABSTRACTIn this work a formalism for the evaluation of electronic losses of heavy ions with energy of few MeV in crystalline semiconductor targets is presented. The stopping values are used in a Monte Carlo simulation to calculate the ion range in silicon and in gallium arsenide for a random orientation of the target and under channelling conditions.

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

2005 ◽  
Vol 108-109 ◽  
pp. 457-462 ◽  
Author(s):  
Mariya G. Ganchenkova ◽  
V.A. Borodin ◽  
S. Nicolaysen ◽  
Risto M. Nieminen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Temperature ◽  
Ab Initio Calculations ◽  
Formation Energy ◽  
Lattice Parameter ◽  
Vacancy Formation Energy ◽  
Vacancy Formation ◽  
Parameter Mismatch ◽  
Elastic Strains

In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the lattice parameter mismatch, on the vacancy formation energy in random Si-Ge compounds. Ab initio calculations demonstrate a number of simple trends characterizing the vacancy formation energy dependence on vacancy charge, the number of Ge atoms in its neighbourhood and on the magnitude of elastic strains. The obtained parameters of vacancy-germanium interaction indicate, in particular, a tendency for preferential vacancy accumulation in SiGe region of Si/SiGe/Si layered structures, which is confirmed here by Monte- Carlo simulation of high-temperature vacancy annealing and agrees well with recent experimental observations.

Monte Carlo simulation of Boron diffusion during low energy implantation and high temperature annealing

1997 ◽  
Vol 469 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Diaz de la Rubia ◽  
J. Zhu ◽  
M. Johnson
Keyword(s):  
Monte Carlo ◽  
High Temperature ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Low Energy ◽  
High Temperature Annealing ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Diffusion Enhancement ◽  
High Doses

ABSTRACTWe use a kinetic Monte Carlo model to simulate the implantation of low energy Boron in Silicon, from 0.5 to 1 keV, at high doses, 1015 ions/cm2. The damage produced by each ion is calculated using UT-Marlowe, based on a binary collision approximation. During implantation at room temperature,, silicon self-interstitials, vacancies and boron interstitials are allowed to migrate and interact. The diffusion kinetics of these defects and dopants has been obtained by ab initio calculations as well as Stillinger Weber molecular dynamics. Clustering of both self-interstitials, vacancies and boron atoms is included. We also model the diffusion of the implanted dopants after a high temperature annealing in order to understand the transient enhanced diffusion (TED) phenomenon. We observe two different stages of TED During the first stage vacancies are present in the lattice together with interstitials and the diffusion enhancement is small. The second stage starts after all the vacancies disappear and gives rise to most of the final TED.

Sign in / Sign up

Export Citation Format

Share Document