Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

1989 ◽  
Vol 157 ◽  
Author(s):  
G. Metzger ◽  
C. B. Fleddermann
Keyword(s):  
Oxygen Content ◽  
Film Growth ◽  
Ion Beam ◽  
Optical Emission ◽  
Beam Current ◽  
Ion Beam Sputtering ◽  
Low Oxygen ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Direct Incorporation

ABSTRACTOxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

High Resolution Backscatter Electron (BSE) Imaging using the Autrata Modified YAG BSE Detector: Comparison of an In-lens Hitachi S-900 FESEM with the Below-the-Lens Hitachi S-4700 FESEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 1046-1047
Author(s):  
Stanley L. Erlandsen ◽  
Ya Chen ◽  
Chris Frethem
Keyword(s):  
High Resolution ◽  
Colloidal Gold ◽  
Ion Beam ◽  
Beam Current ◽  
Backscatter Electron ◽  
Ion Beam Sputtering ◽  
Gold Particles ◽  
Lens Position ◽  
Beam Sputtering ◽  
Working Distance

To obtain high resolution backscatter electron (BSE) images in field emission SEM (FESEM), one must consider selection of accelerating voltage, beam current, working distance between the specimen and the backscatter detector (in-lens or below-the-lens position for the specimen), the type of BSE detector, and the type of metal used to coat the specimen to improve conductivity and signal collection [1]. A new generation of below-the-lens FESEM have been tested for BSE imaging on biological samples, but no information exists on whether or not high resolution imaging is possible. Here we report the comparison of detection of a colloidal gold standard (6, 12, 18 nm) by high resolution BSE imaging using Autrata-modified YAG detectors in an in-lens FESEM and in a below-the-lens FESEM.Standards were prepared by mixing colloidal gold particles of 6 nm, 12 nm, and 18 nm. The gold particles were attached via poly-l-lysine to glass chips and coated with <1 nm Pt by ion beam sputtering.

La1−xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure

2001 ◽  
Vol 229 (1-4) ◽  
pp. 415-418 ◽  
Author(s):  
M. Tada ◽  
J. Yamada ◽  
V.V. Srinivasu ◽  
V. Sreedevi ◽  
H. Kohmoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Examination of Ion Beam-Target Angle Effects by Optical Spectroscopic Profiling

1991 ◽  
Vol 235 ◽  
Author(s):  
J. D. Klein ◽  
A. Yen
Keyword(s):  
Ion Beam ◽  
Emission Spectra ◽  
Optical Emission ◽  
Target Surface ◽  
Normal Incidence ◽  
Ion Beam Sputtering ◽  
Similar Shape ◽  
Beam Sputtering ◽  
Optical Emission Spectra ◽  
Optical Fiber Bundle

ABSTRACTThe optical emission spectra resulting from ion beam sputtering a SrTiO3 target were observed as a function of position. A collimated optical fiber bundle parallel to the plane of die sputter target was translated vertically and horizontally to spectroscopically profile the sputter process. Three different angles of incidence of the beam to die target were examined for evidence of bombardment of candidate substrate positions by undesirable species. When the ion beam was at normal incidence to the target or 22.5* from normal incidence the Ar and O contours were of similar shape. However, when die target was inclined at an angle of 45* to die incident ion beam die O contours deviated markedly. Under these conditions it appears that there is a substantial oxygen flux in a direction normal to die target surface. Under these conditions die placement of a substrate facing die sputter target would probably result in undesirable bombardment of die growing film by energetic oxygen.

The Structure of Si and Ge Deposited by Ion Beam Sputtering

1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Crystallization Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Operating Pressure ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Oxygen Contamination ◽  
Beam Sputtering ◽  
Silicon And Germanium ◽  
Substrate Temperatures

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.

Effects of oxygen ion assist at 1–10 eV on growth of Bi2(Sr,Ca)2CuOx films at 540 °C by ion–beam sputtering

1997 ◽  
Vol 15 (4) ◽  
pp. 1990-1998 ◽  
Author(s):  
T. Endo ◽  
H. Yan ◽  
K. Abe ◽  
S. Nagase ◽  
Y. Ishida ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering

Synthesis of tin oxide films by dual ion beam sputtering using Sn target and oxygen ion beam

1999 ◽  
Vol 112 (1-3) ◽  
pp. 267-270 ◽  
Author(s):  
Yong-Sahm Choe ◽  
Jae-Ho Chung ◽  
Dae-Seung Kim ◽  
Hong Koo Baik
Keyword(s):  
Tin Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Tin Oxide Films
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